![]() |
Volumn 90, Issue 6, 2007, Pages
|
Reduction of traps and improvement of carrier lifetime in 4H-SiC epilayers by ion implantation
|
Author keywords
[No Author keywords available]
|
Indexed keywords
CARRIER MOBILITY;
DEFECTS;
ELECTRON TRAPS;
RAPID THERMAL ANNEALING;
REDUCTION;
SILICON CARBIDE;
CARBON INTERSTITIALS;
IMPLANTED LAYERS;
MINORITY CARRIERS;
SILICON ION IMPLANTATION;
ION IMPLANTATION;
|
EID: 33846987871
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.2472530 Document Type: Article |
Times cited : (203)
|
References (12)
|