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Volumn 90, Issue 6, 2007, Pages

Reduction of traps and improvement of carrier lifetime in 4H-SiC epilayers by ion implantation

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; DEFECTS; ELECTRON TRAPS; RAPID THERMAL ANNEALING; REDUCTION; SILICON CARBIDE;

EID: 33846987871     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2472530     Document Type: Article
Times cited : (203)

References (12)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.