High field effect mobility in Si face 4H-SiC MOSFET transistors

Electronics Letters

Volumn 40, Issue 8, 2004, Pages 508-510

  Olafsson H O ^a   Gudjonsson G ^a   Nilsson, P A ^a   Sveinbjornsson E O ^a   Zirath, H ^a   Rodle T ^b   Jos, R ^b  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CALIBRATION; ELECTRIC POTENTIAL; MOS CAPACITORS; OXIDATION; REDUCTION; SILICON CARBIDE; TRANSISTORS;

COLOUMB SCATTERING; GATE OXIDE; THERMALLY SIMULATED CURRENTS;

MOSFET DEVICES;

EID: 18244429264     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20040351     Document Type: Article

References (7)

1. Yano, H., Hirao, T., Kimoto, T., Matsunami, H., Asano, K., and Sugawara, Y.: 'High channel mobility in inversion layers of 4H-SiC MOSFET's by utilizing (11-20) face', IEEE Electron Device Lett., 1999, 20, pp. 611-613
2. Senzaki, J., Kojima, K., Harada, S., Kosugi, R., Suzuki, S., Suzuki, T., and Fukuda, K.: 'Excellent effects of hydrogen postoxidation annealing on inversion channel mobility of 4H-SiC MOSFET fabricated on (11-20) face', IEEE Electron Device Lett., 2002, 23, pp. 13-15
3. 2 post-oxidation anneal', Mater. Sci. Forum, 2003, 433-436, pp. 567-570
4. Sridevan, S., and Baliga, B.J.: 'Lateral N-channel inversion mode 4H-SiC MOSFET's', IEEE Electron Device Lett., 1998, 19, pp. 228-230
5. Schömer, R., Friedrichs, P., Peters, D., Stephani, D., Dimitrijev, S., and Jamet, P.: 'Enhanced channel mobility of 4H-SiC metal-oxide- semiconductor transistors fabricated with standard polycrystalline silicon technology and gate-oxide nitridation', Appl. Phys. Lett., 2002, 80, pp. 4253-4255
6. Chung, G.Y., Tin, C.C., Williams, J.R., Mcdonald, K., Chanana, R.K., Weller, R.A., Pantelides, S.T., Feldman, L.C., Holland, O.W., Das, M.K., and Palmour, J.W.: 'Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide', IEEE Electron Device Lett., 2001, 22, pp. 176-178
7. 2 interface', Mater. Sci. Forum, 2002, 389-393, pp. 985-988