Deep levels induced by reactive ion etching in n- and p-type 4H-SiC

Journal of Applied Physics

Volumn 108, Issue 2, 2010, Pages

  Kawahara, Koutarou ^a   Krieger, Michael ^b   Suda, Jun ^a   Kimoto, Tsunenobu ^a  

^a KYOTO UNIVERSITY   (Japan)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; DEEP LEVEL; DEFECT CONCENTRATIONS; EPILAYER THICKNESS; HIGH CONCENTRATION; P-TYPE; P-TYPE SIC; SCHOTTKY CONTACTS; THERMAL OXIDATION;

ANNEALING; CAPACITANCE; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; SILICON CARBIDE;

REACTIVE ION ETCHING;

EID: 77955830993     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3460636     Document Type: Article

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