Remarkable increase in the channel mobility of SiC-MOSFETs by controlling the interfacial SiO2 layer between Al2 O3 and SiC

IEEE Transactions on Electron Devices

Volumn 55, Issue 8, 2008, Pages 2041-2045

  Hatayama, Tomohiro ^a,b   Hino, Shiro ^a   Miura, Naruhisa ^b   Oomori, Tatsuo ^b   Tokumitsu, Eisuke ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Aluminum oxide; MOSFETs; Power MOSFETs; Silicon carbide

Indexed keywords

NONMETALS; SILICON; SILICON COMPOUNDS;

ALUMINUM OXIDE; CHANNEL MOBILITIES; MOSFETS; POWER MOSFETS; SILICON CARBIDE DEVICES;

SILICON CARBIDE;

EID: 49249139436     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.926647     Document Type: Article

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