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Volumn 69, Issue 23, 2004, Pages

Diffusion of hydrogen in perfect, p-type doped, and radiation-damaged 4H-SiC

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; BORON; HYDROGEN; SILICON CARBIDE;

EID: 37649032214     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.69.233202     Document Type: Article
Times cited : (22)

References (31)
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    • (1998) Hydrogen in Semiconductors , pp. 439
    • Janson, M.1    Linnarson, M.K.2    Hallén, A.3    Svensson, B.G.4
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    • M. K. Linnarson, U. Forsberg, M. S. Janson, E. Janzén, and B. G. Svensson, in International Conference on Silicon Carbide and Related Materials, edited by S. Yoshida, S. Nishino, H. Harima, and T. Kimoto (Trans. Tech., Switzerland, 2002); [Mater. Sci. Forum 389-393, 565 (2002)].
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    • 33646664884 scopus 로고    scopus 로고
    • C. Hülsen, N. Achtziger, J. Herold, and W. Witthuhn, in European Conference on Silicon Carbide and Related Materials, edited by G. Pensl, D. Stephani, and M. Hundlhausen (Trans. Tech., Switzerland, 2001); [Mater. Sci. Forum 353-356, 331 (2001).
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  • 27
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    • note
    • In principle, diffusion in the two inequivalent horizontal channels of 4H-SiC could be different. However, we estimate the difference to be below 0.1 eV, and performed detailed calculations only for one case. The jump between the two types of channels is symmetric.
  • 30
    • 33646662066 scopus 로고    scopus 로고
    • note
    • To avoid divergence in lattice sums in supercells, a compensating jellium charge is applied in case of charged defects. To correct for the artificial interactions among the supercells, a multipole expansion has been suggested, which is dominated by the monopole term.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.