A study on pre-oxidation nitrogen implantation for the improvement of channel mobility in 4H-SiC MOSFETs

IEEE Transactions on Electron Devices

Volumn 57, Issue 6, 2010, Pages 1195-1200

  Dhar, Sarit ^a   Ryu, Sei Hyung ^a   Agarwal, Anant K ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

4H SiC; Counter doping; Implantation; Interface trap density; Mobility; MOSFET; Nitridation; Nitrogen; Oxidation

Indexed keywords

CHANNEL MOBILITY; COUNTER-DOPING; DOPING MECHANISM; FIELD-EFFECT MOBILITIES; GATE OXIDE; IMPLANTATION; INTERFACE TRAP DENSITY; MOS-FET; MOSFETS; N IMPLANTATION; NITROGEN DOSE; NITROGEN IMPLANTATION; PRE-OXIDATION;

ELECTRON MOBILITY; MOSFET DEVICES; NITROGEN; OXIDATION; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77952742949     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2045670     Document Type: Article

References (33)

1. S. Dimitrijev, H.-F. Li, H. B. Harrison, and D. Sweatman, "Nitridation of silicon-dioxide films grown on 6H silicon carbide," IEEE Electron Device Lett., vol.18, no.5, pp. 175-177, May 1997.
2. H.-F. Li, S. Dimitrijev, D. Sweatman, and H. B. Harrison, "Effect of NO annealing conditions on electrical characteristics of n-type 4H-SiC MOS capacitors," J. Electron. Mater., vol.29, no.8, pp. 1027-1032, Aug. 2000.
3. G. Y. Chung, C. C. Tin, J. R. Williams, K. McDonald, R. K. Chanana, R. A. Weller, S. T. Pantelides, L. C. Feldman, O. W. Holland, M. K. Das, and J. W. Palmour, "Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide," IEEE Electron Device Lett., vol.22, no.4, pp. 176-178, Apr. 2001.
4. M. K. Das, "Recent advances in (0001) 4H-SiC MOS device technology," in Proc. 10th ICSCRM, Lyon, France, Oct. 5-10, 2003.
5. S. Dhar, S. Wang, J. R. Williams, S. T. Pantelides, and L. C. Feldman, "Interface passivation for silicon dioxide layers on silicon carbide," MRS Bull., vol.30, no.4, pp. 288-292, 2005. (Pubitemid 43832587)
6. E. Arnold and D. Alok, "Effect of interface states on electron transport in 4H-SiC inversion layers," IEEE Trans. Electron Devices, vol.48, no.9, pp. 1870-1877, Sep. 2001.
7. N. S. Saks, "A semi-empirical model for electron mobility at the SiC/ SiO2 interface," in Proc. Mater. Res. Soc. Symp., 2003, vol.742, pp. K.4.8.1-K.4.8.6.
8. C.-Y. Lu, J. A. Cooper, Jr., T. Tsuji, G. Chung, J. R. Williams, K. McDonald, and L. C. Feldman, "Effect of process variations and ambient temperature on electron mobility at the SiO2/4H-SiC interface," IEEE Trans. Electron Devices, vol.50, no.7, pp. 1582-1588, Jul. 2003.
9. Y. Wang, K. Tang, T. Khan, M. Koushik Balasubramanian, H. Naik, W. Wang, and T. P. Chow, "The effect of gate oxide processes on the performance of 4H-SiC MOSFETs and gate-controlled diodes," IEEE Trans. Electron Devices, vol.55, no.8, pp. 2046-2053, Aug. 2008.
10. M. Gurfinkel, H. D. Xiong, K. P. Cheung, J. S. Suehle, J. B. Bernstein, Y. Shapira, A. J. Lelis, D. Habersat, and N. Goldsman, "Characterization of transient gate oxide trapping in SiC MOSFETs using fast I-V techniques," IEEE Trans. Electron Devices, vol.55, no.8, pp. 2004-2012, Aug. 2008.
11. P. Jamet, S. Dimitrijev, and P. Tanner, "Effects of nitridation in gate oxides grown on 4H-SiC," J. Appl. Phys., vol.90, no.10, pp. 5058-5063, Nov. 2001. (Pubitemid 33597060)
12. V. V. Afanas'ev, A. Stesmans, F. Ciobanu, G. Pensl, K. Y. Cheong, and S. Dimitrijev, "Mechanisms responsible for improvement of 4H-SiC/SiO2 interface properties by nitridation," Appl. Phys. Lett., vol.82, no.4, pp. 568-570, Jan. 2003.
13. S. Wang, S. Dhar, S.-R. Wang, A. C. Ahyi, A. Franceschetti, J. R. Williams, L. C. Feldman, and S. T. Pantelides, "Bonding at the SiCSiO2 interface and the effects of nitrogen and hydrogen," Phys. Rev. Lett., vol.98, no.2, p. 026 101, 2007.
14. S. A. Correa, C. Radtke, G. V. Soares, L. Miotti, I. J. R. Baumvol, S. Dimitrijev, J. Han, L. Hold, F. Kong, and F. C. Stedile, "Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC," Appl. Phys. Lett., vol.94, no.25, pp. 251 909- 1-251 909-3, Jun. 2009.
15. T. L. Biggerstaff, C. L. Reynolds, Jr., T. Zheleva, A. Lelis, D. Habersat, S. Haney, S.-H. Ryu, A. Agarwal, and G. Duscher, "Relationship between 4H-SiC/SiO2 transition layer thickness and mobility," Appl. Phys. Lett., vol.95, no.3, pp. 032 108-1-032 108-3, Jul. 2009.
16. K. McDonald, R. A.Weller, S. T. Pantelides, L. C. Feldman, G. Y. Chung, C. C. Tin, and J. R. Williams, "Characterization and modeling of the nitrogen passivation of interface traps in SiO2/4H-SiC," J. Appl. Phys., vol.93, no.5, pp. 2719-2722, Mar. 2003.
17. J. Rozen, S. Dhar, M. E. Zvanut, J. R. Williams, and L. C. Feldman, "Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC," J. Appl. Phys., vol.105, no.12, pp. 124 506-1-124 506-11, Jun. 2009.
18. F. Moscatelli, A. Poggi, S. Solmi, and R. Nipoti, "Nitrogen implantation to improve electron channel mobility in 4H-SiC MOSFET," IEEE Trans. Electron Devices, vol.55, no.4, pp. 961-967, Apr. 2008.
19. F. Moscatelli, R. Nipoti, S. Solmi, S. Cristiani, M. Sanmartin, and A. Poggi, "Improvement of electron channel mobility in 4H SiCMOSFET by using nitrogen implantation," in Proc. 12th ICSCRM, Otsu, Japan, Oct. 14-19, 2007.
20. G. Pensl, S. Beljakowa, T. Frank, K. Gao, F. Speck, T. Seyller, L. Ley, F. Ciobanu, V. Afanas'ev, A. Stesmans, T. Kimoto, and A. Schoner, "Alternative techniques to reduce interface traps in n-type 4H-SiC MOS capacitors," Phys. Stat. Sol.(B), vol.245, no.7, pp. 1378-1389, Jul. 2008.
21. A. Poggi, F. Moscatelli, Y. Hijikata, S. Solmi, and R. Nipoti, "MOS capacitors obtained by wet oxidation of n-type 4H-SiC pre-implanted with nitrogen," Microelectron. Eng., vol.84, no.12, pp. 2804-2809, Dec. 2007.
22. F. Ciobanu, G. Pensl, V. Afanas'ev, and A. Schoner, "Low density of interface states in n-type 4H-SiC MOS capacitors achieved by nitrogen implantation," Mater. Sci. Forum, vol.483-485, pp. 693-696, 2005.
23. SRIM2003. [Online]. Available: http://www.srim.org
24. K. Ueno and Y. Seki, "Enhanced oxidation of ion-implanted Si-face of 6H-SiC," Jpn. J. Appl. Phys. 2, Lett., vol. 33, no. 8A, pp. L1 121-L1 123, Aug. 1994.
25. J. A. Cooper, Jr., "Advances in SiCMOS technology," Phys. Stat. Sol.(A), vol.162, no.1, pp. 305-320, Jul. 1997.
26. Y. Hijikata, S. Yoshida, F. Moscatelli, A. Poggi, S. Solmi, S. Cristiani, and R. Nipoti, "Fabrication of MOS capacitors by wet oxidation of p-type 4H-SiC preamorphized by nitrogen ion implantation," Mater. Sci. Forum, vol.556/557, pp. 651-654, 2007.
27. K. Ueno and T. Oikawa, "Counter-doped MOSFETs of 4H-SiC," IEEE Electron Device Lett., vol.20, no.12, pp. 624-626, Dec. 1999.
28. S. Harada, S. Suzuki, J. Senzaki, R. Kosugi, K. Adachi, K. Fukuda, and K. Arai, "High channel mobility in normally-off 4H-SiC buried channel MOSFETs," IEEE Electron Device Lett., vol.22, no.6, pp. 272-274, Jun. 2001.
29. A. Agarwal, S.-H. Ryu, M. Das, L. Lipkin, J. Palmour, and N. Saks, "Large area 4H-SiC powerMOSFETs," in Proc. 13th IPSD, Tokyo, Japan, Jun. 4-7, 2001, pp. 183-186.
30. K. Chatty, T. P. Chow, R. J. Gutmann, E. Arnold, and D. Alok, "Accumulation-layer electron mobility in n-channel 4H-SiC MOSFETs," IEEE Electron Device Lett., vol.22, no.5, pp. 212-214, May 2001.
31. S. C. Sun and J. D. Plummer, "Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces," IEEE Trans. Electron Devices, vol.ED-27, no.8, pp. 1497-1508, Aug. 1980.
32. M. A. Capano, J. Cooper, M. R. Melloch, A. Saxler, and W. C. Mitchel, "Ionization energies and electron mobilities in phosphorus- and nitrogenimplanted 4H-silicon carbide," J. Appl. Phys., vol.87, no.12, pp. 8773- 8777, Jun. 2000.
33. J. N. Pan, J. A. Cooper, Jr., and M. R. Melloch, "Activation of nitrogen implants in 6H-SiC," J. Electron. Mater., vol.26, no.3, pp. 208-211, Mar. 1997.