Paramagnetic defects at the interface of ultrathin oxides grown under vacuum ultraviolet photon excitation on (111) and (100) Si

Applied Physics Letters

Volumn 77, Issue 10, 2000, Pages 1469-1471

  Stesmans, A ^a   Afanas'ev, V V ^a  

^a UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001371175     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1289265     Document Type: Article

References (21)

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14. b-type defect entities are observed by ESR, i.e., few left invisible for ESR as a result of passivation by H. Though grown in room ambient (rich in moisture), the violent oxidation reaction at the interlace under impact of energetic VUV photons (≥8.48 eV) will leave little interfacial SiH bonding.
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