Chemical and electronic structures of Lu 2 O 3 /Si interfacial transition layer

Applied Surface Science

Volumn 216, Issue 1-4 SPEC., 2003, Pages 234-238

  Nohira, H ^a   Shiraishi, T ^a   Nakamura, T ^a   Takahashi, K ^a   Takeda, M ^b   Ohmi, S ^b   Iwai, H ^b   Hattori, T ^a  

^a TOKYO CITY UNIVERSITY   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Depth profiling; High K; Lu 2 O 3; Silicate; Transition layer; XPS

Indexed keywords

COMPOSITION; INTERFACES (MATERIALS); LUTETIUM COMPOUNDS; SEMICONDUCTING SILICON; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

VALENCE BAND;

DIELECTRIC MATERIALS;

EID: 0037670121     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00425-2     Document Type: Conference Paper

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