Introduction of crystalline high-k gate dielectrics in a CMOS process

Journal of Non-Crystalline Solids

Volumn 351, Issue 21-23, 2005, Pages 1885-1889

  Gottlob, H D B ^a   Lemme, M C ^a   Mollenhauer, T ^a   Wahlbrink, T ^a   Efavi, J K ^a   Kurz, H ^a   Stefanov, Y ^b   Haberle, K ^b   Komaragiri, R ^b   Ruland, T ^b   Zaunert, F ^b   Schwalke, U ^b  

^a AMO GMBH   (Germany)

^b DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; MOS DEVICES; SYNTHESIS (CHEMICAL); THICKNESS MEASUREMENT; TRANSISTORS;

CAPCITANCE-VOLTAGE-MEASUREMENTS; ELECTROSTATIC CONTROL; GATE DIELECTRICS; REACTIVE-ION ETCHING;

CRYSTALLINE MATERIALS;

EID: 21144437173     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2005.04.032     Document Type: Conference Paper

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