Carbon nanotubes for VLSI: Interconnect and transistor applications

Proceedings of the IEEE

Volumn 98, Issue 12, 2010, Pages 2015-2031

  Awano, Yuji ^a,b   Sato, Shintaro ^a,c   Nihei, Mizuhisa ^a,c   Sakai, Tadashi ^a,d   Ohno, Yutaka ^e   Mizutani, Takashi ^e  

^a KEIO UNIVERSITY   (Japan)

^b SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^c FUJITSU LABORATORIES LTD   (Japan)

^d TOSHIBA CORPORATION   (Japan)

^e NAGOYA UNIVERSITY   (Japan)

Author keywords

Carbon; field effect transistors (FETs); high speed electronics; interconnections; nanotechnology; wiring

Indexed keywords

BALLISTICS; CARBON; CMOS INTEGRATED CIRCUITS; DETERIORATION; ELECTRIC WIRING; FIELD EFFECT TRANSISTORS; INTEGRATED CIRCUIT INTERCONNECTS; METALS; MOS DEVICES; NANOCATALYSTS; NANOELECTRONICS; NANOTECHNOLOGY; NANOTUBES; OXIDE SEMICONDUCTORS; THERMAL CONDUCTIVITY; VLSI CIRCUITS;

BALLISTIC TRANSPORTS; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; FIELD EFFECT TRANSISTOR (FETS); HIGH MECHANICAL STRENGTH; HIGH-SPEED ELECTRONICS; INTERCONNECTIONS; PARTICLE GENERATION; ULTRAHIGH-THERMAL-CONDUCTIVITY;

MULTIWALLED CARBON NANOTUBES (MWCN);

EID: 78649991345     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2010.2068030     Document Type: Conference Paper

References (91)

1. S. Iijima, "Helical microtubules of graphitic carbon," Nature, vol. 354, pp. 56-58, 1991.
2. R. Saito, G. Dresslhaus, and M. S. Dresselhaus, Physical Properties of Carbon Nanotubes. London, U.K.: Imperial College Press, Apr., 2000.
3. Z. Yao, C. L. Kane, and C. Dekker, "High-field electrical transport in single-wall carbon nanotubes," Phys. Rev. Lett., vol. 84, no. 13, pp. 2941-2944, Mar. 2000.
4. J. Kong, E. Yenilmez, T. W. Tombler, W. Kim, H. Dai, R. B. Laughlin, L. Liu, C. S. Jayanthi, and S. Y. Wu, "Quantum interference and ballistic transmission in nanotube electron waveguides," Phys. Rev. Lett., vol. 87, no. 10, 106801, Sep. 2001.
5. P. Kim, L. Shi, A. Majumdar, and P. L. McEuen, "Thermal transport measurements of individual multiwalled nanotubes," Phys. Rev. Lett., vol. 87, no. 21, 215502, Nov. 2001.
6. M. Horibe, M. Nihei, D. Kondo, A. Kawabata, and Y. Awano, "Influence of growth mode of carbon nanotubes on physical properties for multiwalled carbon nanotube films grown by catalystic chemical vapor deposition," Jpn. J. Appl. Phys., vol. 43, no. 10, pp. 7337-7341, 2004.
7. M. M. J. Treacy, T. W. Ebbesen, and J. M. Gibson, "Exceptionally high Young's modulus observed for individual carbon nanotubes," Nature, vol. 381, pp. 678-680, Jun. 1996.
8. K. Natori, T. Shimizu, and T. Ikenobe, "Characteristics of a carbon nanotube field-effect transistor analyzed as a ballistic nanowire field-effect transistor," J. Appl. Phys., vol. 97, 034306, 2005.
9. A. Naeemi, R. Sarvari, and J. D. Meindl, "Performance comparison between carbon nanotube and copper interconnects for GSI," in Proc. Int. Electron Devices Meeting, Dec. 2004, pp. 699-702.
10. N. Srivastava, R. V. Joshi, and K. Banerjee, "Carbon nanotube interconnects: Implications for performance, power dissipation and thermal management," in Proc. Int. Electron Devices Meeting, 2005, pp. 257-260.
11. K. Okada, H. Ito, and K. Masu, "On-chip differential transmission-line (DTL) interconnect for 22 nm technology," in Proc. Adv. Metallization Conf., San Diego, CA, Oct. 2006, pp. 2-3.
12. J. Hutchby, "Emerging research devices," ITRS Public Conf., Jul. 2008. [Online]. Available: http://www.itrs.net/Links/2008Summer/ Presentations.html
13. D. Kondo, S. Sato, A. Kawabata, and Y. Awano, "Selective growth of vertically aligned double- and single-walled carbon nanotubes on a substrate at 590 °C," Nanotechnology, vol. 19, 435601, 2008.
14. T. Iwai, H. Shioya, D. Kondo, S. Hirose, A. Kawabata, S. Sato, M. Nihei, T. Kikkawa, K. Joshin, Y. Awano, and N. Yokoyama, "Thermal and source bumps utilizing carbon nanotubes for flip-chip high power amplifiers," in Proc. IEEE Int. Electron Devices Meetings, Dec. 2005, pp. 257-260.
15. I. Soga, D. Kondo, Y. Yamaguchi, T. Iwai, T. Kikkawa, and K. Joshin, "Thermal management for flip-chip high power amplifiers utilizing carbon nanotube bumps," in Proc. IEEE Int. Symp. Radio-Frequency Integr. Technol., Dec. 2009, p. 221.
16. I. Soga, D. Kondo, Y. Yamaguchi, T. Iwai, M. Mizukoshi, Y. Awano, K. Yube, and T. Fujii, "Carbon nanotube bumps for LSI interconnect," in Proc. Electron. Compon Technol. Conf., May 2008, pp. 1390-1394.
17. BInterconnect WG,[ in Proc. ITRS Winter Conf., Dec. 16, 2009, pp. 1-28. [Online]. Available: http://www.itrs.net/Links/2009Winter/Presentations.html.
18. M. Nihei, M. Horibe, A. Kawabata, and Y. Awano, "Carbon nanotube vias for future LSI interconnects," in Proc. Int. Interconnect Technol. Conf., San Francisco, CA, 2004, pp. 251-253.
19. M. Nihei, D. Kondo, A. Kawabata, S. Sato, H. Shioya, M. Sakaue, T. Iwai, M. Ohfuti, and Y. Awano, "Low-resistance multi-walled carbon nanotube vias with parallel channel conduction of inner shells," in Proc. IEEE Int. Interconnect Technol. Conf., San Francisco, CA, 2005, pp. 234-236.
20. F. Kreupl, A. P. Graham, G. S. Duesberg, W. Steinhögl, M. Liebau, E. Unger, and W. Ḧoenlei, "Carbon nanotubes in interconnect applications," Microelectron. Eng., vol. 64, pp. 399-408, 2002.
21. J. Li, R. Stevens, L. Delzeit, H. T. Ng, A. Cassell, J. Han, and M. Meyyappan, "Electronic properties of multiwalled carbon nanotubes in an embedded vertical array," Appl. Phys. Lett., vol. 81, pp. 910-912, 2002.
22. M. Nihei, A. Kawabata, D. Kondo, M. Horibe, S. Sato, and Y. Awano, "Electrical properties of carbon nanotube bundles for future via interconnects," Jpn. J. Appl. Phys., vol. 44, pp. 1626-1628, 2005. (Pubitemid 40892534)
23. J. Robertson, G. Zhong, H. Telg, C. Thomsen, J. M. Warner, G. A. D. Briggs, U. Detlaff, S. Roth, and J. Dijon, "Carbon nanotubes for interconnects in VLSI integrated circuits," Phys. Stat. Sol. (b), vol. 245, pp. 2303-2307, 2008.
24. K. Tanioku, T. Maruyama, and S. Naritsuka, "Low temperature growth of carbon nanotubes on Si substrates in high vacuum," Diamond Related Mater., vol. 17, pp. 589-593, 2008.
25. Y. Yamazaki, N. Sakuma, M. Katagiri, M. Suzuki, T. Sakai, S. Sato, M. Nihei, and Y. Awano, "High-quality carbon nanotube growth at low temperature by pulse-excited remote plasma chemical vapor deposition," Appl. Phys. Exp., vol. 1, 034004, 2008.
26. S. Sato, M. Nihei, A. Mimura, A. Kawabata, D. Kondo, H. Shioya, T. Iwai, M. Mishima, M. Ohfuti, and Y. Awano, "Novel approach to fabricating carbon nanotube via interconnects using size-controlled catalyst nanoparticles," in Proc. IEEE Int. Interconnect Technol. Conf., "urlingame, CA, 2006, pp. 230-232.
27. M. Nihei, T. Hyakushima, S. Sato, T. Nozue, M. Norimatsu, M. Mishima, T. Murakami, D. Kondo, A. Kawabata, M. Ohfuti, and Y. Awano, "Electrical properties of carbon nanotube via interconnects fabricated by novel damascene process," in Proc. IEEE Int. Interconnect Technol. Conf., "urlingame, CA, 2007, pp. 204-206.
28. A. Kawabata, S. Sato, T. Nozue, T. Hyakushima, M. Norimatsu, M. Mishima, T. Murakami, D. Kondo, K. Asano, M. Ohfuti, H. Kawarada, T. Sakai, M. Nihei, and Y. Awano, "Robustness of CNT via interconnect fabricated by low temperature process over a high-density current," in Proc. IEEE Int. Interconnect Technol. Conf., "urlingame, CA, 2008, pp. 237-239.
29. M. Nihei, A. Kawabata, T. Hyakushima, S. Sato, T. Nozue, D. Kondo, H. Shioya, T. Iwai, M. Ohfuti, and Y. Awano, BCarbon nanotube via technologies for advanced interconnect integration," in Proc. Int. Conf. Solid State Devices Mater., Yokohama, 2006, pp. 140-141.
30. Y. Awano, S. Sato, D. Kondo, M. Ohfuti, A. Kawabata, M. Nihei, and N. Yokoyama, "Carbon nanotube via interconnect technologies: Size-classified catalyst nanoparticles and low-resistance ohmic contact formation," Phys. Stat. Sol. (a), vol. 203, pp. 3611-3616, 2006.
31. S. Sato, A. Kawabata, M. Nihei, and Y. Awano, "Growth of diameter-controlled carbon nanotubes using monodisperse nickel nanoparticles obtained with a differential mobility analyzer," Chem. Phys. Lett., vol. 382, pp. 361-366, 2003.
32. S. Sato, A. Kawabata, D. Kondo, M. Nihei, and Y. Awano, "Carbon nanotube growth from titanium-cobalt bimetallic particles as a catalyst," Chem. Phys. Lett., vol. 402, pp. 149-154, 2005.
33. P. A. Baron and K. Willeke, Aerosol Measurements: Principles, Techniques, and Applications, 2nd ed. New York: Wiley, 2001.
34. Y. Awano Carbon nanotube interconnect technologies. "Online]. Available: http://www.miraipj.jp/mirai-j/topics/report2009/2009-a06.pdf
35. Y. Yamazaki, M. Katagiri, N. Sakuma, M. Suzuki, S. Sato, M. Nihei, M. Wada, N. Nakamura, N. Matsunaga, T. Sakai, and Y. Awano, "Synthesis of a closely packed multi-walled carbon nanotube forest by a multi-step plasma chemical vapor deposition growth method," in Proc. Mater. Res. Soc. Fall Meeting, 2009, pp. K5-20.
36. M. Katagiri, Y. Yamazaki, N. Sakuma, M. Suzuki, T. Sakai, M. Wada, N. Nakamura, N. Matsunaga, S. Sato, M. Nihei, and Y. Awano, "Fabrication of 70-nm-diameter carbon nanotube via interconnects by remote plasma-enhanced chemical vapor deposition and their electrical properties," in Proc. IEEE Int. Interconnect Technol. Conf., Sapporo, Japan, 2009, pp. 44-46.
37. M. Tada, H. Ohta, M. Narihiro, F. Ito, T. Taiji, M. Tohara, L. Motoyama, Y. Kasema, M. Tagami, M. Abe, T. Kakouchi, K. Arai, S. Saito, N. Furutake, T. Onodera, J. Kawahara, K. Kinoshita, N. Hata,T. Kikkawa, Y.Tsuchida, K. Fujii, N. Oda, M. Sekine, and Y. Hayashi, "Feasibility study of novel molecular pore-stacking (MPS), SiOCH film in fully-scale-down 45 nm node Cu damascene interconnects," in Proc. Symp. Very Large Scale Integr. (VLSI) Technol., 2005, pp. 18-19.
38. J. C. Coiffic, M. Fayolle, H. Le Poche, S. Maitrejean, and S. Olivier, "Realization of via interconnects based on carbon nanotubes," in Proc. IEEE Int. Interconnect Technol. Conf., "urlingame, CA, 2008, pp. 153-155.
39. K. Banerjee, S. Im, N. Srivastava BCan carbon nanotubes extend the lifetime of on-chip electrical interconnections?" in Proc. 1st Int. Conf. Nano-Netw. 2006, 1-9.
40. Y. Awano, "Carbon nanotube technology for LSI via interconnects," IEICE Trans. Electron., vol. E 89, pp. 1499-1503, 2006.
41. H. Wei, N. Patil, A. Lin, H.-S. P. Wong, and S. Mitra, "Monolithic three-dimensional integrated circuits using carbon nanotube FETs and interconnects," in Proc. IEEE Int. Electron Device Meeting, Baltimore, 2009, pp. 577-580.
42. A. Naeemi and J. D. Meindl, "Performance benchmarking for graphene nanoribbon, carbon nanotube, and Cu interconnects," in Proc. IEEE Int. Interconnect Technol. Conf., Burlingame, CA, 2008, pp. 183-185.
43. Y. Awano, BGraphene for VLSI: FET and interconnect applications," in Proc. IEEE Int. Electron Device Meeting, Baltimore, 2009, DOI: 10.1109/IEDM.2009.5424381.
44. V. Perebeinos, J. Tersoff, and P. Avouris, "Electron-phonon interaction and transport in semiconducting carbon nanotubes," Phys. Rev. Lett., vol. 94, 086802, 2005.
45. S. M. Sze and K. K. NG, Physics of Semiconductor Devices, 3rd ed. New York: Wiley, 2007.
46. M. S. Purewal, B. H. Hong, A. Ravi, B. Chandra, J. Hone, and P. Kim, "Scaling of resistance and electron mean free path of single-walled carbon nanotubes," Phys. Rev. Lett., vol. 98, 186808, 2007.
47. A. Javey, H. Kim, M. Brink, Q. Wang, A. Ural, J. Guo, P. McIntyre, P. McEuen, M. Lundstrom, and H. J. Dai, "High-kappa dielectrics for advanced carbon-nanotube transistors and logic gates," Nature Mater., vol. 1, pp. 241-246, 2002.
48. Y. R. Lu, S. Bangsaruntip, X. R. Wang, L. Zhang, Y. Nishi, and H. J. Dai, "DNA functionalization of carbon nanotubes for ultrathin atomic layer deposition of high kappa dielectrics for nanotube transistors with 60 mV/decade switching," J. Amer. Chem. Soc., vol. 128, pp. 3518-3519, 2006.
49. D. B. Farmer, R. G. Gordon, Atomic layer deposition on suspended single-walled carbon nanotubes via gas-phase noncovalent functionalization. Nano Lett. 6, 699-703, 2006.
50. D. B. Farmer and R. G. Gordon, "ALD of high-kappa dielectrics on suspended functionalized SWNTs," Electrochem. Solid-State Lett., vol. 8, pp. G89-G91, 2005.
51. A. Javey, M. Shim, and H. J. Dai, "Electrical properties and devices of large-diameter single-walled carbon nanotubes," Appl. Phys. Lett., vol. 80, pp. 1064-1066, 2002.
52. R. Martel, V. Derycke, C. Lavoie, J. Appenzeller, K. K. Chan, J. Tersoff, and P. Avouris, "Ambipolar electrical transport in semiconducting single-wall carbon nanotubes," Phys. Rev. Lett., vol. 87, 256805, 2001.
53. Y. Nosho, Y. Ohno, S. Kishimoto, and T. Mizutani, "n-Type carbon nanotube field-effect transistors fabricated by using Ca contact electrodes," Appl. Phys. Lett., vol. 86, 073105, 2005.
54. Y. M. Lin, J. Appenzeller, J. Knoch, and P. Avouris, "High- performance carbon nanotube field-effect transistor with tunable polarities," IEEE Trans. Nanotechnol., vol. 4, pp. 481-489, 2005. (Pubitemid 41441339)
55. J. Chen, C. Klinke, A. Afzali, and P. Avouris, "Self-aligned carbon nanotube transistors with charge transfer doping," Appl. Phys. Lett., vol. 86, 123108, 2005.
56. S. Heinze, J. Tersoff, R. Martel, V. Derycke, J. Appenzeller, and P. Avouris, "Carbon nanotubes as Schottky barrier transistors," Phys. Rev. Lett., vol. 89, 106801, 2002.
57. R.-H. Yan, A. Ourmazd, and K. F. Lee, "Scaling the Si MOSFET: From bulk to SOI to bulk," IEEE Trans. Electron Devices, vol. 39, no. 7, pp. 1704-1710, Jul. 1992.
58. Y. Nosho, Y. Ohno, S. Kishimoto, and T. Mizutani, "The effects of chemical doping with F(4)TCNQ in carbon nanotube field-effect transistors studied by the transmission-line-model technique," Nanotechnology, vol. 18, 415202, 2007.
59. N. Moriyama, Y. Ohno, T. Kitamura, S. Kishimoto, and T. Mizutani, "Change in carrier type in high-k gate carbon nanotube field-effect transistors by interface fixed charges," Nanotechnology, vol. 21, 165201, 2010.
60. J. Knoch and J. Appenzeller, "Tunneling phenomena in carbon nanotube field-effect transistors," Phys. Stat. Sol. (a), vol. 205, pp. 679-694, 2008.
61. C. P. Auth and J. D. Plummer, "Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's," IEEE Electron Device Lett., vol. 18, no. 2, pp. 74-76, Feb. 1997.
62. A. D. Franklin, R. A. Sayer, T. D. Sands, T. S. Fisher, and D. B. Janes, "Toward surround gates on vertical single-walled carbon nanotube devices," J. Vac. Sci. Technol. B, vol. 27, pp. 821-826, 2009.
63. Z. H. Chen, D. Farmer, S. Xu, R. Gordon, P. Avouris, and J. Appenzeller, "Externally assembled gate-all-around carbon nanotube field-effect transistor," IEEE Electron Device Lett., vol. 29, no. 2, pp. 183-185, Feb. 2008.
64. Z. H. Chen, J. Appenzeller, J. Knoch, Y. M. Lin, P. Avouris, The role of metal-nanotube contact in the performance of carbon nanotube field-effect transistors, Nano Lett. 5, 1497-1502. 2005. (Pubitemid 41084442)
65. Y. Nosho, Y. Ohno, S. Kishimoto, and T. Mizutani, "Relation between conduction property and work function of contact metal in carbon nanotube field-effect transistors," Nanotechnology, vol. 17, pp. 3412-3415, 2006.
66. C. W. Zhou, J. Kong, E. Yenilmez, and H. J. Dai, "Modulated chemical doping of individual carbon nanotubes," Science, vol. 290, pp. 1552-1555, 2000.
67. M. Bockrath, J. Hone, A. Zettl, P. L. McEuen, A. G. Rinzler, and R. E. Smalley, "Chemical doping of individual semiconducting carbon-nanotube ropes," Phys. Rev. B, vol. 61, pp. 10 606-10 608, 2000.
68. V. Derycke, R. Martel, J. Appenzeller, P. Avouris, Carbon nanotube inter- and intramolecular logic gates, Nano Lett. 1, 453-456, 2001. (Pubitemid 33673964)
69. Z. Y. Zhang, X. L. Liang, S. Wang, K. Yao, Y. F. Hu, Y. Z. Zhu, Q. Chen, W. W. Zhou, Y. Li, Y. G. Yao, J. Zhang, L. M. Peng Doping-free fabrication of carbon nanotube based ballistic CMOS devices and circuits Nano Lett. 7, 3603-3607, 2007.
70. Z. H. Chen, J. Appenzeller, Y. M. Lin, J. Sippel-Oakley, A. G. Rinzler, J. Y. Tang, S. J. Wind, P. M. Solomon, and P. Avouris, "An integrated logic circuit assembled on a single carbon nanotube," Science, vol. 311, pp. 1735-1735, 2006.
71. D. G. Park, H. J. Cho, K. Y. Lim, C. Lim, I. S. Yeo, J. S. Roh, and J. W. Park, "Characteristics of n(+) polycrystalline-Si/Al2O3/Si metal-oxide-semiconductor structures prepared by atomic layer chemical vapor deposition using Al(CH3)(3) and H2O vapor," J. Appl. Phys., vol. 89, pp. 6275-6280, 2001.
72. M. J. Biercuk, D. J. Monsma, C. M. Marcus, J. S. Becker, and R. G. Gordon, "Low-temperature atomic-layer-deposition lift-off method for microelectronic and nanoelectronic applications," Appl. Phys. Lett., vol. 83, pp. 2405-2407, 2003.
73. J. Guo, S. Hasan, A. Javey, G. Bosman, and M. Lundstrom, "Assessment of high-frequency performance potential of carbon nanotube transistors," IEEE Trans. Nanotechnol., vol. 4, no. 6, pp. 715-721, Nov. 2005. (Pubitemid 41729632)
74. D. L. Pulfrey and L. Chen, "Examination of the high-frequency capability of carbon nanotube FETs," Solid State Electron., vol. 52, pp. 1324-1328, 2008.
75. L. Nougaret, H. Happy, G. Dambrine, V. Derycke, J. P. Bourgoin, A. A. Green, and M. C. Hersam, B80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes,[ Appl. Phys. Lett., vol. 94, 243505, 2009.
76. A. Ismach, L. Segev, E. Wachtel, and E. Joselevich, "Atomic-step- templated formation of single wall carbon nanotube patterns," Angewandte Chemie, vol. 116, pp. 6266-6269, 2004.
77. H. Ago, K. Nakamura, K. Ikeda, N. Uehara, N. Ishigami, and M. Tsuji, "Aligned growth of isolated single-walled carbon nanotubes programmed by atomic arrangement of substrate surface," Chem. Phys. Lett., vol. 408, pp. 433-438, 2005.
78. C. Kocabas, S. H. Hur, A. Gaur, M. A. Meitl, M. Shim, and J. A. Rogers, "Guided growth of large-scale, horizontally aligned arrays of single-walled carbon nanotubes and their use in thin-film transistors," Small, vol. 1, pp. 1110-1116, 2005.
79. D. Phokharatkul, Y. Ohno, H. Nakano, S. Kishimoto, and T. Mizutani, "High-density horizontally aligned growth of carbon nanotubes with Co nanoparticles deposited by arc-discharge plasma method," Appl. Phys. Lett., vol. 93, 053112, 2008.
80. C. Rutherglen, D. Jain, and P. Burke, "Nanotube electronics for radiofrequency applications," Nature Nanotechnol., vol. 4, pp. 811-819, 2009.
81. R. Krupke, F. Hennrich, H. von Lohneysen, and M. M. Kappes, "Separation of metallic from semiconducting single-walled carbon nanotubes," Science, vol. 301, pp. 344-347, 2003. (Pubitemid 36877063)
82. Y.Maeda, S. Kimura, M. Kanda, Y. Hirashima, T. Hasegawa, T. Wakahara, Y. F. Lian, T. Nakahodo, T. Tsuchiya, T. Akasaka, J. Lu, X. W. Zhang, Z. X. Gao, Y. P. Yu, S. Nagase, S. Kazaoui, N. Minami, T. Shimizu, H. Tokumoto, and R. Saito, "Large-scale separation of metallic and semiconducting single-walled carbon nanotubes," J. Amer. Chem. Soc., vol. 127, pp. 10 287-10 290, 2005. (Pubitemid 41045495)
83. M. Zheng, A. Jagota, E. D. Semke, B. A. Diner, R. S. Mclean, S. R. Lustig, R. E. Richardson, and N. G. Tassi, "DNA-assisted dispersion and separation of carbon nanotubes," Nature Mater., vol. 2, pp. 338-342, 2003.
84. M. S. Arnold, A. A. Green, J. F. Hulvat, S. I. Stupp, and M. C. Hersam, "Sorting carbon nanotubes by electronic structure using density differentiation," Nature Nanotechnol., vol. 1, pp. 60-65, 2006.
85. T. Tanaka, H. Jin, Y. Miyata, S. Fujii, H. Suga, Y. Naitoh, T. Minari, T. Miyadera, K. Tsukagoshi, H. Kataura, Simple and scalable gel-based separation of metallic and semiconducting carbon nanotubes, Nano Lett. 9, 1497-1500, 2009.
86. S. Ghosh and C. N. R. Rao, "Separation of metallic and semiconducting single-walled carbon nanotubes through fluorous chemistry," Nano Res., vol. 2, pp. 183-191, 2009.
87. X. M. Tu, S. Manohar, A. Jagota, and M. Zheng, "DNA sequence motifs for structure-specific recognition and separation of carbon nanotubes," Nature, vol. 460, pp. 250-253, 2009.
88. A. Vijayaraghavan, S. Blatt, D. Weissenberger, M. Oron-Carl, F. Hennrich, D. Gerthsen, H. Hahn, R. Krupke, Ultra-large-scale directed assembly of single-walled carbon nanotube devices, Nano Lett. 7 1556-1560, 2007.
89. A. Vijayaraghavan, F. Hennrich, N. Sturzl, M. Engel, M. Ganzhorn, M. Oron-Carl, C. W. Marquardt, S. Dehm, S. Lebedkin, M. M. Kappes, and R. Krupke, "Toward single-chirality carbon nanotube device arrays," ACS Nano, vol. 4, pp. 2748-2754, 2010.
90. H. Shimauchi, Y. Ohno, S. Kishimoto, and T. Mizutani, "Suppression of hysteresis in carbon nanotube field-effect transistors: Effect of contamination induced by device fabrication process," Jpn. J. Appl. Phys. 1, vol. 45, pp. 5501-5503, 2006.
91. A. Kawabata, H. Nakano, T. Murakami, T. Daidou, M. Sato, T. Hyakushima, D. Kondo, S. Sato, M. Nihei, Y. Awano, and N. Yokoyama, "Nearly closest packing structure of carbon nanotube, TEM-EELS analysis of catalyst metals for high-density carbon nanotube growth," in Proc. Int. Conf. Sci. Appl. Nanotubes, 2010.