Thermal management for flip-chip high power amplifiers utilizing carbon nanotube bumps

2009 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2009

Volumn , Issue , 2009, Pages 221-224

  Soga, Ikuo ^a   Kondo, Daiyu ^a   Yamaguchi, Yoshitaka ^a   Iwai, Taisuke ^a   Kikkawa, Toshihide ^a   Joshin, Kazukiyo ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Carbon nanotubes; Flip chip; GaN; HEMT; High power amplifiers

Indexed keywords

ACTIVE AREA; ALGAN/GAN HEMTS; FINE PITCH; FLIP CHIP; GAN HEMTS; GATE WIDTHS; HEMT; HIGH POWER AMPLIFIER; OPERATING VOLTAGE; OUTPUT POWER; THERMAL MANAGEMENT;

FLIP CHIP DEVICES; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; METALS; POWER AMPLIFIERS; PROTECTIVE COATINGS;

CARBON NANOTUBES;

EID: 77951437464     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RFIT.2009.5383724     Document Type: Conference Paper

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