Suppression of hysteresis in carbon nanotube field-effect transistors: Effect of contamination induced by device fabrication process

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 6 B, 2006, Pages 5501-5503

  Shimauchi, Hideki ^a   Ohno, Yutaka ^a,b   Kishimoto, Shigeru ^a   Mizutani, Takashi ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Carbon nanotube; Field effect transistor; Hysteresis; Passivation

Indexed keywords

CARBON NANOTUBES; CLEANING; CONTAMINATION; PASSIVATION; POLYMETHYL METHACRYLATES; SOLUTIONS;

DEVICE FABRICATION PROCESS; HYSTERESIS SUPPRESSION;

FIELD EFFECT TRANSISTORS;

EID: 33745668664     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.5501     Document Type: Review

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