High-density horizontally aligned growth of carbon nanotubes with Co nanoparticles deposited by arc-discharge plasma method

Applied Physics Letters

Volumn 93, Issue 5, 2008, Pages

  Phokharatkul, D ^a   Ohno, Y ^a   Nakano, H ^b   Kishimoto, S ^a   Mizutani, T ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b ULVAC INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAVITY RESONATORS; DOPING (ADDITIVES); ELECTRIC DISCHARGES; ELECTRODEPOSITION; FIELD EFFECT TRANSISTORS; HAFNIUM; HAFNIUM COMPOUNDS; NANOPARTICLES; OXIDE MINERALS; PLASMA THEORY; QUARTZ; SINGLE-WALLED CARBON NANOTUBES (SWCN);

A DENSITIES; ALIGNED GROWTHS; ALIGNED NANOTUBES; ARC DISCHARGES; CHANNEL WIDTHS; CO NANOPARTICLES; DOPING PROCESS; GATE INSULATORS; HIGH DENSITIES; MULTICHANNEL; N-TYPE CONDUCTIONS; NORMALLY ON; ON CURRENTS; POSITIVE CHARGES; QUARTZ SUBSTRATES; ROOM TEMPERATURES; SINGLE PULSE; TOP GATES;

CARBON NANOTUBES;

EID: 51849094837     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2969290     Document Type: Article

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