Characteristics of a carbon nanotube field-effect transistor analyzed as a ballistic nanowire field-effect transistor

Journal of Applied Physics

Volumn 97, Issue 3, 2005, Pages

  Natori, Kenji ^a   Kimura, Yoji ^a   Shimizu, Tomo ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTIC NANOWIRES; GATE CAPACITANCE; GATE INSULATORS; GRAPHENE BAND;

BAND STRUCTURE; CAPACITANCE; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; ELECTRIC INSULATORS; GATES (TRANSISTOR); NANOSTRUCTURED MATERIALS; QUANTUM THEORY; SILICON;

CARBON NANOTUBES;

EID: 13644274218     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1840096     Document Type: Article

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