Toward surround gates on vertical single-walled carbon nanotube devices

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 2, 2009, Pages 821-826

  Franklin, Aaron D ^a   Sayer, Robert A ^a   Sands, Timothy D ^a   Fisher, Timothy S ^a   Janes, David B ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AGGRESSIVE SCALING; CHANNEL LENGTHS; GATE GEOMETRIES; LARGE-SCALE FABRICATIONS; ONE-DIMENSIONAL; POROUS ANODIC ALUMINAS; SHORT-CHANNEL EFFECTS; SINGLE-WALLED CARBONS; SURROUND GATES; TEMPLATED; TOP-DOWN PROCESS;

FIELD EFFECT TRANSISTORS; MESFET DEVICES; SINGLE-WALLED CARBON NANOTUBES (SWCN);

CARBON NANOTUBES;

EID: 64549109833     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3054266     Document Type: Article

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