High-performance carbon nanotube field-effect transistor with tunable polarities

IEEE Transactions on Nanotechnology

Volumn 4, Issue 5, 2005, Pages 481-489

  Lin, Yu Ming ^a,b   Appenzeller, Joerg ^a,b   Knoch, Joachim ^a,c   Avouris, Phaedon ^{a,b,d,e,f,g,h,i,j,k,l,m}  

^a IEEE   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

^d IBM   (Germany)

^e AMERICAN ACADEMY OF ARTS AND SCIENCES   (United States)

^f AMERICAN PHYSICAL SOCIETY   (United States)

^g Institute of Physics   (United Kingdom)

^h IBM Academy of Technology   (United States)

ⁱ AAAS   (United States)

^j American Vacuum Society   (United States)

^k NEW YORK ACADEMY OF SCIENCES   (United States)

^l AMERICAN CHEMICAL SOCIETY   (United States)

^m Materials Research Society (MRS)   (North Korea)

more..

Author keywords

Carbon nanotube; Doping; Field effect transistor; Schottky barrier (SB)

Indexed keywords

DOPING; OXIDE THICKNESS; SCHOTTKY BARRIER (SB); TUNABLE POLARITIES;

DOPING (ADDITIVES); ELECTROSTATICS; FIELD EFFECT TRANSISTORS; LEAKAGE CURRENTS; OXIDES; SCHOTTKY BARRIER DIODES;

CARBON NANOTUBES;

EID: 26644474574     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2005.851427     Document Type: Article

References (45)

1. S. Iijima and T. Ichihashi, "Single-shell carbon nanotubes of 1-nm diameter," Nature, vol. 363, pp. 603-605, 1993.
2. D. S. Bethune, C. H. Kiang, M. S. Devries, G. Gorman, R. Savoy, J. Vazquez, and R. Beyers, "Cobalt-catalized growth of carbon nanotubes with single-atomic-layerwalls," Nature, vol. 363, pp. 605-607, 1993.
3. M. S. Dresselhaus, G. Dresselhaus, and P. Avouris, Carbon Nanotubes: Synthesis, Structure, Properties, and Applications. Berlin, Germany: Springer-Verlag, 2001.
4. Z. Yao, C. L. Kane, and C. Dekker, "High-field electrical transport in single-wall carbon nanotubes," Phys. Rev. Lett., vol. 84, pp. 2941-2944, 2000.
5. M. S. Fuhrer, B. M. Kim, T. Duerkop, and T. Brintlinger, "High-mobility nanotube transistor memory," Nano Lett., vol. 2, pp. 755-759, 2002.
6. R. Martel, T. Schmidt, H. R. Shea, T. Hertel, and P. Avouris, "Single- and multiwall carbon nanotube field-effect transistors," Appl. Phys. Lett., vol. 73, pp. 2447-2449, 1998.
7. S. T. Tans, A. R. M. Verschueren, and C. Dekker, "Room-temperature transistor based on a single carbon nanotube," Nature, vol. 393, pp. 49-52, 1998.
8. S. J. Wind, J. Appenzeller, R. Martel, V. Derycke, and P. Avouris, "Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes," Appl. Phys. Lett., vol. 80, pp. 3817-3819, 2002.
9. A. Bachtold, P. Hadley, T. Nakanishi, and C. Dekker, "Logic circuits with carbon nanotube transistors," Science, vol. 294, pp. 1317-1320, 2001.
10. J. Appenzeller, J. Knoch, V. Derycke, R. Martel, S. Wind, and P. Avouris, "Field-modulated carrier transport in carbon nanotube transistors," Phys. Rev. Lett., vol. 89, pp. 126801-1-126801-4, 2002.
11. A. Javey, H. Kim, M. Brink, Q. Wang, A. Ural, J. Guo, P. McIntyre, M. Lundstrom, and H. Dai, "High-k dielectrics for advanced carbon-nanotube transistors and logic gates," Nature Mater., vol. 1, pp. 241-246, 2002.
12. S. Rosenblatt, Y. Yaish, J. Park, J. Gore, V. Sazonova, and P. L. McEuen, "High performance electrolyte gated carbon nanotube transistors," Nano Lett., vol. 2, pp. 869-872, 2002.
13. G. P. Siddons, D. Merchin, J. H. Back, J. K. Jeong, and M. Shim, "Highly efficient gating and doping of carbon nanotubes with polymer electrolytes," Nano Lett., vol. 4, pp. 927-931, 2004.
14. A. Javey, J. Guo, D. B. Farmer, Q. Wang, E. Yenilmez, R. G. Gordon, M. Lundstrom, and H. Dai, "Self-aligned ballistic molecular transistors and electrically parallel nanotube arrays," Nano Lett., vol. 4, pp. 1319-1322, 2004.
15. R. Martel, V. Derycke, C. Lavoie, J. Appenzeller, K. K. Chan, J. Tersoff, and P. Avouris, "Ambipolar electrical transport in semiconductor single-wall carbon nanotubes," Phys. Rev. Lett., vol. 87, pp. 256 805-1-256 805-4, 2001.
16. D. J. Frank, R. H. Dennard, E. Norwak, P. M. Solomon, Y. Taur, and H.-S. P. Wong, "Device scaling limits of Si MOSFETs and their application dependencies," Proc. IEEE, vol. 89, no. 3, pp. 259-288, Mar. 2001.
17. P. L. McEuen, M. S. Fuhrer, and H. Park, "Single-walled carbon nanotube electronics," IEEE Trans. Nanotechnol., vol. 1, no. 1, pp. 78-85, Mar. 2002.
18. P. Avouris, J. Appenzeller, R. Martel, and S. J. Wind, "Carbon nanotube electronics," Proc. IEEE, vol. 91, no. 11, pp. 1772-1784, Nov. 2003.
19. M. Freitag, M. Radosavljevic, Y. X. Zhou, A. T. Johnson, and W. F. Smith, "Controlled creation of a carbon nanotube diode by a scanned gate," Appl. Phys. Lett., vol. 79, pp. 3326-3328, 2001.
20. S. Heinze, J. Tersoff, R. Martel, V. Derycke, J. Appenzeller, and P. Avouris, "Carbon nanotubes as Schottky barrier transistors," Phys. Rev. Lett., vol. 89, pp. 106801-1-106801, 2002.
21. J. Appenzeller, M. Radosavljevic, J. Knoch, and P. Avouris, "Tunneling versus thermionic emission in one-dimensional semiconductors," Phys. Rev. Lett., vol. 92, pp. 048 301-1-048 301-4, 2004.
22. S. J. Wind, J. Appenzeller, and P. Avouris, "Lateral scaling in carbon-nanotube field-effect transistors," Phys. Rev. Lett., vol. 91, pp. 058 301-1-058 301-4, 2003.
23. A. Javey, J. Guo, Q. Wang, M. Lundstrom, and H. Dai, "Ballistic carbon nanotube field-effect transistors," Nature, vol. 424, pp. 654-657, 2003.
24. M. Radosavljevic, S. Heinze, J. Tersoff, and P. Avouris, "Drain voltage scaling in carbon nanotube transistors," Appl. Phys. Lett., vol. 83, pp. 2435-2437, 2003.
25. J. Guo, S. Datta, and M. Lundstrom, "A numerical study of scaling issues for Schottky barrier carbon nanotube transistors," IEEE Trans. Electron Devices, vol. 51, no. 2, pp. 172-177, Feb. 2004.
26. S. Heinze, M. Radosavljevic, J. Tersoff, and P. Avouris, "Unexpected scaling of the performance of carbon nanotube transistors," Phys. Rev. B, Condens. Matter, vol. 68, pp. 235 418-1-235 418-5, 2003.
27. Y.-M. Lin, J. Appenzeller, and P. Avouris, "Ambipolar-to-unipolar conversion of carbon nanotube transistors by gate structure engineering," Nano Lett., vol. 4, pp. 947-950, 2004.
28. _, "Novel structures enabling bulk switching in carbon nanotube FETs," in IEEE 62th Device Research Conf. Dig., 2004, pp. 133-134.
29. A. Thess, R. Lee, P. Nikolaev, H. Dai, P. Petit, J. Robert, C. Xu, Y. H. Lee, S. G. Kim, A. G. Rinzier, D. T. Colbert, G. E. Scuseria, D. Tomanek, J. E. Fischer, and R. E. Smalley, "Crystalline ropes of metallic carbon nanotubes," Science, vol. 273, pp. 483-487, 1996.
30. H. Kawaura, T. Sakamoto, T. Baba, Y. Ochiai, J. Fujita, S. Matsui, and J. Sone, "Transistor operation of 30-nm gate-length EJ-MOSFETs," Electron Device Lett., vol. 19, no. 3, pp. 74-76, Mar. 1998.
31. S. Tiwari, J. J. Welser, and P. M. Solomon, "Straddle-gate transistor: Changing MOSFET channel length between off- and on-state toward achieving tunneling-defined limit of field-effect," in Int. Electron Devices Meeting Tech. Dig., 1998, pp. 737-740.
32. A. Javey, J. Guo, D. B. Farmer, Q. Wang, D. Wang, R. G. Gordon, M. Lundstrom, and H. Dai, "Carbon nanotube field-effect transistors with integrated ohmic contacts and high-k gate dielectrics," Nano Lett., vol. 4, pp. 447-450, 2004.
33. J. U. Lee, P. P. Gipp, and C. M. Heller, "Carbon nanotube p-n junction diodes," Appl. Phys. Lett., vol. 85, pp. 145-147, 2004.
34. J. Knoch, S. Mantl, Y.-M. Lin, Z. Chen, P. Avouris, and J. Appenzeller, "An extended model for carbon nanotube field-effect transistor," in IEEE 62th Device Research Conf. Dig., 2004, pp. 135-136.
35. J. Appenzeller, Y.-M. Lin, J. Knoch, and P. Avouris, "Band-to-band tunneling in carbon nanotube field-effect transistors," Phys. Rev. Lett., vol. 93, pp. 196 805-1-196 805-4, 2004.
36. P. Avouris, "Carbon nanotube electronics and optoelectronics," MRS Bull., vol. 29, pp. 403-410, 2004.
37. M. Freitag, V. Perebeinos, J. Chen, A. Stein, J. C. Tsang, J. A. Misewich, R. Martel, and P. Avouris, "Hot carrier electroluminescence from a single carbon nanotube," Nano Lett., vol. 4, pp. 1063-1066, 2004.
38. V. Derycke, R. Martel, J. Appenzeller, and P. Avouris, "Carbon nanotube inter- and intramolecular logic gates," Nano Lett., vol. 1, pp. 453-456, 2001.
39. M. Shim, A. Javey, N. Kam, and H. Dai, "Polymer functionalization for air-stable n-type carbon nanotube field effect transistors," J. Amer. Chem. Soc., vol. 123, pp. 11 512-11 513, 2001.
40. M. Bockrath, J. Hone, A. Zettl, and P. L. McEuen, "Chemical doping of individual semiconducting carbon-nanotube ropes," Phys. Rev. B, Condens. Matter, vol. 61, pp. R10606-R10608, 2000.
41. J. Kong, C. Zhou, E. Yenilmez, and H. Dai, "Alkaline metal-doped n-type semiconducting nanotubes as quantum dots," Appl. Phys. Lett., vol. 77, pp. 3977-3979, 2000.
42. M. Radosavljevic, J. Appenzeller, and P. Avouris, "High performance of potassium n-doped carbon nanotube field-effect transistors," Appl. Phys. Lett., vol. 84, pp. 3693-3695, 2004.
43. J. Chen, C. Klinke, A. Afzali, and P. Avouris, "Air-stable chemical doping of carbon nanotube transistors," in 62th Device Research Conf. Dig., 2004, pp. 137-138.
44. J. Kong, J. Cao, and H. Dai, "Chemical profiling of single nanotubes: Intramolecular p-n-p junctions and on-tube single-electron transistors," Appl. Phys. Lett., vol. 80, pp. 73-75, 2002.
45. J. Knoch, S. Mantel, and J. Appenzeller, "Comparison of transport properties in carbon nanotube field-effect transistors with Schottky contacts and doped source/drain contacts," Solid State Electron, vol. 49, pp. 73-76, 2005.