Fabrication of 70-nm-diameter carbon nanotube via interconnects by remote plasma-Enhanced chemical vapor deposition and their electrical properties

Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009

Volumn , Issue , 2009, Pages 44-46

  Katagiri, Masayuki ^a   Yamazaki, Yuichi ^a   Sakuma, Naoshi ^a   Suzuki, Mariko ^a   Sakai, Tadashi ^a   Wada, Makoto ^a   Nakamura, Naofumi ^a   Matsunaga, Noriaki ^a   Sato, Shintaro ^b   Nihei, Mizuhisa ^b   Awano, Yuji ^b  

^a TOSHIBA CORPORATION   (Japan)

^b SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL PROPERTY; HIGH QUALITY; INTER-LAYER DIELECTRICS; MULTI-WALLED; REMOTE PLASMAS; ULTRAFINE; VIA HOLE; VIA INTERCONNECT;

CARBON NANOTUBES; ELECTRIC PROPERTIES; PLASMA DEPOSITION; PLASMAS; VAPORS;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 70349463106     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2009.5090336     Document Type: Conference Paper

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