A comparative study of the internal quantum efficiency for the green MQWs grown on sapphire and FS-GaN substrates

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 1, 2007, Pages 187-191

  Jeong, Yong Hee ^a   Lee, Hae Yong ^a   Park, Jae Young ^b   Jeong, Jong Pil ^b   Hong, Chang Hee ^b   Suh, Eun Kyung ^b  

^a Samsung Corning Co Ltd   (South Korea)

^b Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BLUE LASERS; CARRIER LOCALIZATION; COMPARATIVE STUDIES; GAN SUBSTRATES; INTERNAL QUANTUM EFFICIENCY; INTERNATIONAL SYMPOSIUM; LOSS REDUCTION; OPTICAL-; PIEZO-ELECTRIC FIELDS; QUANTUM-CONFINED STARK EFFECT; SAPPHIRE SUBSTRATES; SPECTRAL PEAK ENERGIES; TEMPERATURE-DEPENDENT; V DEFECTS;

CIVIL AVIATION; CORUNDUM; DEFECT DENSITY; GALLIUM NITRIDE; LASERS; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; LIGHT SOURCES; QUANTUM EFFICIENCY; SAPPHIRE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; SURFACE STRUCTURE;

GALLIUM ALLOYS;

EID: 49549105334     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200673528     Document Type: Conference Paper

References (20)

1. F. A. Ponce and D. P. Bour, Nature (London) 386, 351 (1997).
2. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, and H. Kiyoku, Jpn. J. Appl. Phys. 37, 309 (1998).
3. S. Nakamura, S. Senoh, N. Iwasa, and S. Nagahama, Jpn. J. Appl. Phys. 34, 797 (1995).
4. C. H. Chen, S. J. Chang, and Y. K. Su, Jpn. J. Appl. Phys. 42, 2281 (2003).
5. G. Harbers and C. G. A. Hoelen, Tech. Digest SID Intl. Symp. (2001), p. 702-705.
6. M. Holt, III-Vs Review, Volume 14, Issue 3, April 2001, pp. 44-47
7. Subramanian Muthu, F. J. Schuurmans, and M. D. Pashley, IEEE J. Select. Top. Quantum Electron. 8, 327 (2002).
8. Tsung-Xian Lee, Chao-Ying Lin, Shih-Hsin Ma, and Ching-Cherng Sun, Optics Express 13(11), 4175 (2005).
9. A. Mills, III-Vs Review, Volume 18, Issue 9, December 2005-January 2006, pp. 30-35.
10. X. H. Wu, P. Fini, E. J. Tarsa, B. Heying, S. Keller, U. K. Mishra, S. P. Denbaars, and J. S. Speck, J. Cryst. Growth 189/190, 231 (1998).
11. X. G. Qiu, Y. Segawa, Q. K. Xue, Q. Z. Xue, and T. Sakurai, Appl. Phys. Lett. 77, 1316 (2000).
12. S. Figge et al., J. Cryst. Growth 221, 262 (2000).
13. M. S. Jeong, Y. W. Kim, J. O. White, E. K. Suh, M. G. Cheong, C. S. Kim, C. H. Hong, and H. J. Lee, Appl. Phys. Lett. 79, 3440 (2001).
14. Z. C. Feng, T. R. Yang, and Y. T. Hou, Mater. Sci. Semicond. Process. 4, 571 (2001).
15. S. Y. Karpov and Y. N. Makarov, Appl. Phys. Lett. 81, 4721 (2002).
16. J. Y. Shi, L. P. Yu, Y. Z Wang, G. Y. Zhang, and H. Zhang, Appl. Phys. Lett. 80, 2293 (2002).
17. M. J. Kappers et al., Proceedings of the EW-MOVPE 11, 5-8 (June 2005).
18. Meng-Ku Chen et al., J. Cryst. Growth 279, 55 (2005).
19. T. Matsuoka, H. Okamoto, M. Nakao, H. Harima, and E. Kurimoto, Appl. Phys. Lett. 81, 1246 (2002).
20. S. F. Chichibu, A. C. Abare et al., Appl. Phys. Lett. 73, 2006 (1998).