SCOPUS 정보 검색 플랫폼

Volumn 310, Issue 23, 2008, Pages 5166-5169

Surface morphology control of green LEDs with p-InGaN layers grown by metalorganic chemical vapor deposition

(9) Liu, Jianping a Ryou, Jae Hyun a Lochner, Zachary a Limb, Jae a Yoo, Dongwon a Dupuis, Russell D a Wu, Zhihao b Fischer, Alec M b Ponce, Fernando A b

a GEORGIA INSTITUTE OF TECHNOLOGY (United States)

b ARIZONA STATE UNIVERSITY (United States)

Author keywords

A1. Crystal morphology; A3. Metalorganic chemical vapor deposition; B2. Semiconducting III V materials; B3. Light emitting diodes

Indexed keywords

CORUNDUM; DISLOCATIONS (CRYSTALS); EPITAXIAL LAYERS; GALLIUM NITRIDE; LIGHT EMITTING DIODES; MAGNESIUM PRINTING PLATES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE MORPHOLOGY; VAPORS;

A1. CRYSTAL MORPHOLOGY; A3. METALORGANIC CHEMICAL VAPOR DEPOSITION; B2. SEMICONDUCTING III-V MATERIALS; B3. LIGHT-EMITTING DIODES; EPITAXIAL STRUCTURES; GAN SUBSTRATES; LED STRUCTURES; METALORGANIC CHEMICAL VAPOR DEPOSITIONS; P-INGAN; PIT DENSITIES; SAPPHIRE SUBSTRATES; THREADING DISLOCATION DENSITIES;

GALLIUM ALLOYS;

EID: 56249088241 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.07.033 Document Type: Article

Times cited : (6)

References (8)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.