In situ measurement of stress generation arising from dislocation inclination in AlxGa1-xN:Si thin films

Applied Physics Letters

Volumn 93, Issue 11, 2008, Pages

  Acord, Jeremy D ^a   Manning, Ian C ^a   Weng, Xiaojun ^a   Snyder, David W ^a   Redwing, Joan M ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MICROCRYSTALLINE SILICON; SILICON;

IN-SITU MEASUREMENTS; SI-DOPING; STRESS GENERATION;

ALUMINUM;

EID: 52349092634     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2986448     Document Type: Article

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