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Volumn 73, Issue 5, 1998, Pages 641-643

Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition

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Indexed keywords


EID: 0001607824     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121933     Document Type: Article
Times cited : (85)

References (27)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.