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Volumn 82, Issue 1-3, 2001, Pages 137-139
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Time-resolved optical properties of GaN grown by metalorganic vapor phase epitaxy with indium surfactant
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Author keywords
Indium doping; Nitrides; Recombination time; Time resolved
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Indexed keywords
CATHODOLUMINESCENCE;
DISLOCATIONS (CRYSTALS);
EXCITONS;
HYDROGEN;
METALLORGANIC VAPOR PHASE EPITAXY;
NITROGEN;
PHOTOLUMINESCENCE;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTOR DOPING;
SEMICONDUCTOR GROWTH;
SURFACE ACTIVE AGENTS;
ISOELECTRONIC INDIUM DOPING;
TIME-RESOLVED PHOTOLUMINESCENCE;
SEMICONDUCTING GALLIUM COMPOUNDS;
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EID: 0035933213
PISSN: 09215107
EISSN: None
Source Type: Journal
DOI: 10.1016/S0921-5107(00)00714-5 Document Type: Article |
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Times cited : (4)
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References (7)
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