Indium-induced changes in GaN(0001) surface morphology

Physical Review B - Condensed Matter and Materials Physics

Volumn 60, Issue 12, 1999, Pages R8473-R8476

  Northrup, John E ^a   Neugebauer, Jörg ^b  

^a PALO ALTO RESEARCH CENTER   (United States)

^b FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 15344351565     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.60.R8473     Document Type: Article

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