Characterizing nanometer-sized v -defects in InGaN single quantum well films by high-spatial-resolution cathodoluminescence spectroscopy

Applied Physics Letters

Volumn 94, Issue 13, 2009, Pages

  Yoshikawa, M ^a   Murakami, M ^a   Ishida, H ^a   Harima, H ^b  

^a TORAY RESEARCH CENTER INC   (Japan)

^b KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABNORMAL CHANGES; CATHODOLUMINESCENCE SPECTROSCOPIES; FILM EDGES; GAN BUFFER LAYERS; GAN LAYERS; HIGH SPATIAL RESOLUTIONS; PEAK INTENSITIES; PEAK WAVELENGTHS; SEM; SINGLE QUANTUM WELLS; SPECTRAL VARIATIONS; STRESS-INDUCED; THREADING DEFECTS; V-DEFECTS;

CATHODOLUMINESCENCE; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; SURFACE DEFECTS; THERMAL EXPANSION;

DEFECTS;

EID: 64149106547     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3104850     Document Type: Article

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