SCOPUS 정보 검색 플랫폼

Japanese Journal of Applied Physics

Volumn 49, Issue 9 PART 1, 2010, Pages

A new metal-insulator-metal capacitor with nickel fully silicided polycrystalline silicon electrodes

(5) Lee, Jung Hsiang a Tsai, Zheng Ye a Lin, Yi Chang a Zhu, Yi Yun a Chen, Bo Han a

a CHING YUN UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION MECHANISM; FULLY SILICIDED; HIGH TEMPERATURE; HIGH-CAPACITANCE DENSITY; LOW FIELD; LOW RESISTIVITY; MATERIAL CHARACTERIZATIONS; METAL-INSULATOR-METAL CAPACITORS; MIM CAPACITORS; NOBLE METALS; POLY-CRYSTALLINE SILICON; ROOM TEMPERATURE; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY EMISSIONS; VOLTAGE COEFFICIENT;

CAPACITORS; ELECTRODES; METAL INSULATOR BOUNDARIES; METALS; POLYSILICON; PRECIOUS METALS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICIDES;

MIM DEVICES;

EID: 78049371854 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.49.091503 Document Type: Article

Times cited : (3)

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