SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 475, Issue 1-2 SPEC. ISS., 2005, Pages 354-358

Physical and electrical properties of ZrO2 and YSZ high-k gate dielectric thin films grown by RF magnetron sputtering

(6) Jeong, S H a Bae, I S a Shin, Y S a Lee, S B a Kwak, H T b Boo, J H a

a Sungkyunkwan University (South Korea)

b Kookmin University (South Korea)

Author keywords

High k gate dielectrics; Leakage current; RF magnetron sputtering; YSZ films; ZrO2 films

Indexed keywords

ANNEALING; CAPACITORS; CURRENT DENSITY; ENERGY DISPERSIVE SPECTROSCOPY; FILM GROWTH; GATES (TRANSISTOR); LEAKAGE CURRENTS; MAGNETRON SPUTTERING; MIM DEVICES; PERMITTIVITY; SCANNING ELECTRON MICROSCOPY; SILICA; X RAY DIFFRACTION ANALYSIS; ZIRCONIA;

ANNEALING TEMPERATURE; HIGH-K GATE DIELECTRICS; RF MAGNETRON SPUTTERING; YSZ FILMS; ZR2O FILMS;

THIN FILMS;

EID: 13444311802 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2004.07.023 Document Type: Conference Paper

Times cited : (66)

References (15)

1
- 0001394083
- Paul A. Packen Science 24 1999 2079
- (1999) Science , vol.24 , pp. 2079
- Packen Paul, A.¹

2
- 0035934742
- Z.J. Luo, X. Guo, T.P. Ma, and T. Tamagawa Appl. Phys. Lett. 79 2001 2803
- (2001) Appl. Phys. Lett. , vol.79 , pp. 2803
- Luo, Z.J.¹ Guo, X.² Ma, T.P.³ Tamagawa, T.⁴

3
- 33749339827
- D. Han, J. Kang, C. Lin, and R. Han Chin. Phys. 12 2003 325
- (2003) Chin. Phys. , vol.12 , pp. 325
- Han, D.¹ Kang, J.² Lin, C.³ Han, R.⁴

4
- 0000024537
- W. Qi, R. Nieh, B.H. Lee, L. Kang, and Y. Jeon Appl. Phys. Lett. 77 2000 3269
- (2000) Appl. Phys. Lett. , vol.77 , pp. 3269
- Qi, W.¹ Nieh, R.² Lee, B.H.³ Kang, L.⁴ Jeon, Y.⁵

5
- 0012178305
- Y. Nishikawa, N. Fukushima, N. Yasuda, K. Nakayama, and S. Ikegawa Jpn. J. Appl. Phys. P1 41 2002 2480
- (2002) Jpn. J. Appl. Phys. , vol.141 , pp. 2480
- Nishikawa, Y.¹ Fukushima, N.² Yasuda, N.³ Nakayama, K.⁴ Ikegawa, S.⁵

6
- 0042729998
- J. Zhu, and Z.G. Liu Mater. Lett. 57 2003 4297
- (2003) Mater. Lett. , vol.57 , pp. 4297
- Zhu, J.¹ Liu, Z.G.²

7
- 0001307437
- R.H. French, S.J. Glass, F.S. Ohuchi, Y.N. Xu, and W.T. Ching Phys. Rev. 49 1994 5133
- (1994) Phys. Rev. , vol.49 , pp. 5133
- French, R.H.¹ Glass, S.J.² Ohuchi, F.S.³ Xu, Y.N.⁴ Ching, W.T.⁵

8
- 21544445051
- D.K. Fork, and D.B. Fenner Appl. Phys. Lett. 57 1990 1137
- (1990) Appl. Phys. Lett. , vol.57 , pp. 1137
- Fork, D.K.¹ Fenner, D.B.²

9
- 0030291621
- K. Hubbard, and D.G. Schlom J. Mater. Res. 11 1996 2757
- (1996) J. Mater. Res. , vol.11 , pp. 2757
- Hubbard, K.¹ Schlom, D.G.²

10
- 0041864110
- K. Endo, and T. Tatsumi Jpn. J. Appl. Phys. P2 42 2003 685
- (2003) Jpn. J. Appl. Phys. , vol.242 , pp. 685
- Endo, K.¹ Tatsumi, T.²

11
- 0035848090
- S.J. Wang, C.K. Ong, S.Y. Xu, P. Chen, W.C. Tjiu, J.W. Chai, A.C.H. Huan, W.J. Yoo, J.S. Lim, W. Feng, and W.K. Choi Appl. Phys. Lett. 78 2001 1604
- (2001) Appl. Phys. Lett. , vol.78 , pp. 1604
- Wang, S.J.¹ Ong, C.K.² Xu, S.Y.³ Chen, P.⁴ Tjiu, W.C.⁵ Chai, J.W.⁶ Huan, A.C.H.⁷ Yoo, W.J.⁸ Lim, J.S.⁹ Feng, W.¹⁰ Choi, W.K.¹¹

12
- 79956006409
- S.J. Wang, and C.K. Ong Appl. Phys. Lett. 80 2002 2541
- (2002) Appl. Phys. Lett. , vol.80 , pp. 2541
- Wang, S.J.¹ Ong, C.K.²

13
- 0034515133
- P. Gao, L.J. Meng, M.P. dos Santos, V. Teixeira, and M. Andritschky Thin Solid Films 377 2000 32
- (2000) Thin Solid Films , vol.377 , pp. 32
- Gao, P.¹ Meng, L.J.² Dos Santos, M.P.³ Teixeira, V.⁴ Andritschky, M.⁵

14
- 0034502867
- P. Gao, L.J. Meng, M.P. dos Santos, V. Teixeira, and M. Andritschky Thin Solid Films 377 2000 557
- (2000) Thin Solid Films , vol.377 , pp. 557
- Gao, P.¹ Meng, L.J.² Dos Santos, M.P.³ Teixeira, V.⁴ Andritschky, M.⁵

15
- 0345778869
- S. Horita, M. Watanabe, and A. Masuda Mater. Sci. Eng., B, Solid-State Mater. Adv. Technol. 54 1998 79
- (1998) Mater. Sci. Eng., B, Solid-State Mater. Adv. Technol. , vol.54 , pp. 79
- Horita, S.¹ Watanabe, M.² Masuda, A.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.