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Volumn 18, Issue 8, 2007, Pages 847-854

A thermally robust Ni-FUSI process using in 65 nm CMOS technology

Author keywords

[No Author keywords available]

Indexed keywords

FULLY SILICIDED (FUSI) GATE; NICKEL SILICIDE LAYER; POLY-GATE FORMATION;

EID: 34249877198     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-006-9088-1     Document Type: Article
Times cited : (8)

References (19)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.