A high performance MIM capacitor using HfO 2 dielectrics

IEEE Electron Device Letters

Volumn 23, Issue 9, 2002, Pages 514-516

  Hu, Hang ^b   Zhu, Chunxiang ^a,b   Lu, Y F ^b   Li, M F ^a,b   Cho, Byung Jin ^a,b   Choi, W K ^b  

^a IEEE   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

High ; MIM capacitor; Temperature coefficient; Thin film devices; Voltage linearity

Indexed keywords

DIELECTRIC FILMS; METAL-INSULATOR-METAL CAPCIATORS;

CAPACITANCE; DIELECTRIC DEVICES; ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; INTEGRATED CIRCUITS; LEAKAGE CURRENTS; MIM DEVICES; PERMITTIVITY; THERMAL EFFECTS; THIN FILM DEVICES; VOLTAGE CONTROL;

CAPACITORS;

EID: 0036714971     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.802602     Document Type: Article

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