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Volumn 10, Issue 1, 2010, Pages 41-46

Effect of poly silicon thickness on the formation of Ni-FUSI gate by using atomic layer deposited nickel film

Author keywords

Atomic layer deposition; Flatband voltage; Fully silicidation; Metal gate; Nickel silicide phase

Indexed keywords

ATOMIC LAYER DEPOSITED; C-V CURVE; C-V MEASUREMENT; CROSS-SECTIONAL SCANNING; FLAT-BAND VOLTAGE SHIFT; FLATBAND VOLTAGE; FULLY SILICIDATION; FULLY SILICIDE GATES; METAL GATE; NATIVE OXIDES; NI FILMS; NI-SILICIDE; NICKEL FILM; NICKEL SILICIDE PHASE; POLY-SI; POLY-SI FILMS; RAPID THERMAL PROCESS; SILICIDATION; X- RAY DIFFRACTION;

EID: 69249202495     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2009.04.011     Document Type: Article
Times cited : (16)

References (16)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.