Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors

Microelectronic Engineering

Volumn 87, Issue 3, 2010, Pages 301-305

  Bertaud, T ^a,b   Bermond, C ^a   Lacrevaz, T ^a   Vallee C ^b   Morand, Y ^c   Flechet B ^a   Farcy, A ^c   Gros Jean, M ^c   Blonkowski, S ^c  

^a UNIVERSITÉ DE SAVOIE   (France)

^b Laboratoire Interdisciplinaire de Physique   (France)

^c STMICROELECTRONICS   (France)

Author keywords

Characterization; HfO2; MIM capacitors; RF technology; VCC; ZrO2

Indexed keywords

COMPLEX PERMITTIVITY; DIELECTRIC THICKNESS; IN-SITU CHARACTERIZATION; INTEGRATION DENSITY; MANUFACTURING PROCESS; MEASUREMENT PROCEDURES; MIM CAPACITORS; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; RESONANCE MECHANISM; RF TECHNOLOGY; TEST VEHICLE; ULTRA-THIN; WIDE BAND FREQUENCIES;

CAPACITANCE; CAPACITORS; DIELECTRIC MATERIALS; HAFNIUM COMPOUNDS; PERMITTIVITY; PLASMA DEPOSITION; ZIRCONIUM ALLOYS;

MIM DEVICES;

EID: 74449089006     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.06.016     Document Type: Article

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