Characterization of resistivity and work function of sputtered-TaN film for gate electrode applications

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 5, 2003, Pages 2026-2028

  Kang, Chang Seok ^a   Cho, H J ^a   Kim, Y H ^a   Choi, R ^a   Onishi, K ^a   Shahriar, A ^a   Lee, J C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARGON; CRYSTAL STRUCTURE; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; FERMI LEVEL; MOS DEVICES; NITROGEN; PERMITTIVITY; POLYCRYSTALLINE MATERIALS; SILICON WAFERS; X RAY DIFFRACTION ANALYSIS;

CRYSTALLINITY; FOUR POINT PROBE; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; POSTMETAL ANNEALING; RAPID THERMAL OXIDATION; REACTIVE SPUTTERING; TANTALUM NITRIDE;

TANTALUM COMPOUNDS;

EID: 0242509094     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1603285     Document Type: Article

References (13)

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