Work function tuning and material characteristics of lanthanide-incorporated metal nitride gate electrodes for NMOS device applications

IEEE Transactions on Electron Devices

Volumn 53, Issue 8, 2006, Pages 1877-1884

  Ren, Chi ^a,b   Chan, Daniel Siu Hung ^a   Li, Ming Fu ^a,b   Loh, Wei Yip ^b   Balakumar, S ^b   Tung, Chih Hang ^b   Balasubramanian, N ^b   Kwong, Dim Lee ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Lanthanide; Metal gate electrode; Metal nitride (MNx); NMOS; Work function

Indexed keywords

ANNEALING; ELECTRODES; GATES (TRANSISTOR); OPTIMIZATION; RARE EARTH ELEMENTS; THERMODYNAMIC STABILITY;

METAL GATE ELECTRODE; METAL NITRIDE; WORK FUNCTION;

MOS DEVICES;

EID: 33746631375     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.878017     Document Type: Article

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