Modulation of the effective work function of fully-silicided (FUSI) gate stacks

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 1857-1860

  Kittl, J A ^a,b   Lauwers, A ^a,b   Pawlak, M A ^a,b   Veloso, A ^a,b   Yu, H Y ^a,b   Chang, S Z ^a,b   Hoffmann, T ^a,b   Pourtois, G ^a,b   Brus, S ^a,b   Demeurisse, C ^a,b   Vrancken, C ^a,b   Absil, P P ^a,b   Biesemans, S ^a,b  

^a IMEC   (Belgium)

^b TEXAS INSTRUMENTS   (Belgium)

Author keywords

Fully silicided (FUSI) gates; High k dielectrics; Silicides; Work function

Indexed keywords

DIELECTRIC MATERIALS; ION IMPLANTATION; MICROELECTRODES; NICKEL COMPOUNDS; SILICIDES; TUNING;

BAND EDGES; DIELECTRIC CAPS; GATE STACKS; WORK FUNCTIONS (WF);

GATES (TRANSISTOR);

EID: 34248669042     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.002     Document Type: Article

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