High capacitance density (> 17 fF/μm2) Nb 2O5-based MIM capacitors for future RF IC applications

Digest of Technical Papers - Symposium on VLSI Technology

Volumn 2005, Issue , 2005, Pages 56-57

  Kim, Sun Jung ^a   Cho, Byung Jin ^a   Yu, M B ^b   Li, M F ^a,b   Xiong, Y Z ^b   Zhu, C ^a   Chin, A ^a   Kwong, D L ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CARRIER CONCENTRATION; DIELECTRIC MATERIALS; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; NIOBIUM COMPOUNDS;

HIGH CAPACITANCE VALUES; HIGH-K DIELECTRICS; MIM CAPACITORS;

MIM DEVICES;

EID: 33745156470     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2005.1469210     Document Type: Conference Paper

References (9)

1. ITRS (2004).
2. S. J. Kim et al., VLSI Tech. Dig., p.77 (2003).
3. T. Ishikawa et al., IEDM, p.940 (2002).
4. H. Hu et al., IEDM, p.379 (2003).
5. C. Schnitter et al., CARTS 2003, S1-2, (2003).
6. th Propt. Appl. Dielec. Mat., S20-2, (2003).
7. A. Pignolet et al., Thin Solid Film, p.18 (1995).
8. Y. Matsui et al., SSDM, p.760 (2004).
9. S. J. Kim et al., VLSI Tech. Dig., p.218 (2004).