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Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 879-882

Voltage and Temperature Dependence of Capacitance of High-K HfO 2 MIM Capacitors: A Unified Understanding and Prediction

(8) Zhu, Chunxiang a Hu, Hang a Yu, Xiongfei a Kim, S J a Chin, Albert b Li, M F a,d Cho, Byung Jin a Kwong, D L c

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

b NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

c The University of Texas at Austin (United States)

d INSTITUTE OF MICROELECTRONICS (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CAPACITORS; CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTROMAGNETIC WAVE POLARIZATION; FREQUENCY RESPONSE; HAFNIUM COMPOUNDS; Q FACTOR MEASUREMENT; RELAXATION PROCESSES; SEMICONDUCTOR DEVICE MODELS; TEMPERATURE DISTRIBUTION; THICKNESS MEASUREMENT; VOLTAGE DISTRIBUTION MEASUREMENT;

CARRIER RELAXATION TIME MEASUREMENT; FREE CARRIERS INJECTION; VOLTAGE COEFFICIENT OF CAPACITANCE (VCC);

MIM DEVICES;

EID: 0842309718 PISSN: 01631918 EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/IEDM.2003.1269419 Document Type: Conference Paper

Times cited : (55)

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