TiN/ZrO2/Ti/Al metal-insulator-metal capacitors with subnanometer CET using ALD-deposited ZrO2 for DRAM applications

IEEE Electron Device Letters

Volumn 30, Issue 3, 2009, Pages 219-221

  Monaghan, Scott ^a   Cherkaoui, Karim ^a   O'Connor, Éamon ^a   Djara, Vladimir ^a   Hurley, Paul K ^a   Oberbeck, Lars ^b   Tois, Eva ^c   Wilde, L ^d   Teichert, Steffen ^b  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b QIMONDA DRESDEN GMBH AND CO OHG   (Germany)

^c ASM Microchemistry Oy   (Finland)

^d Fraunhofer Center Nanoelectronic Technologies   (Germany)

Author keywords

ALD; Capacitor; Dynamic random access memory (DRAM); Effective dielectric constant; Gate oxide; High k; Metal insulator metal (MIM); ZrD 04, ZrO2

Indexed keywords

CAPACITANCE; CAPACITORS; CERAMIC CAPACITORS; DIELECTRIC WAVEGUIDES; DYNAMIC RANDOM ACCESS STORAGE; ELECTRODEPOSITION; GATES (TRANSISTOR); INTERNET PROTOCOLS; METAL INSULATOR BOUNDARIES; METALS; MIM DEVICES; PERMITTIVITY; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTOR INSULATOR BOUNDARIES; STRONTIUM COMPOUNDS; STRUCTURAL METALS; ZIRCONIUM; ZIRCONIUM ALLOYS;

ALD; DYNAMIC RANDOM ACCESS MEMORY (DRAM); EFFECTIVE DIELECTRIC CONSTANT; GATE OXIDE; HIGH-K; METAL-INSULATOR-METAL (MIM); ZRD-04, ZRO2;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 62549150735     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2012356     Document Type: Article

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