Recent advances in silicon etching for MEMS using the ASE process

Sensors and Actuators, A: Physical

Volumn 74, Issue 1, 1999, Pages 13-17

  Hynes, A M ^a   Ashraf, H ^a   Bhardwaj, J K ^a   Hopkins, J ^a   Johnston, I ^a   Shepherd, J N ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; ETCHING; OPTICAL DEVICES; PHOTORESISTS; SILICON WAFERS;

PARAMETER RAMPING; SILICON ETCHING;

MICROELECTROMECHANICAL DEVICES;

EID: 0032674784     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(98)00326-4     Document Type: Article

References (2)

1. F. Lärmer, A. Schilp, Method of Anisotropically Etching Silicon, German Patent DE4241045C1, USA patents 4855017 and 4784720.
2. Bhardwaj J.K., Ashraf H. Advanced silicon etching using high density plasmas. Proc. SPIE Micromachining and Microfabrication Process Technology. 2639:1995;224-233.