Low-energy ion-scattering spectroscopic analysis of structural damage in Si substrate under ultrathin SiO2 after gate etching

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 4 A, 1999, Pages 2124-2130

  Matsui, Miyako ^a   Uchida, Fumihiko ^a   Tokunaga, Takafumi ^a   Enomoto, Hiroyuki ^a   Umezawa, Tadashi ^a  

^a HITACHI LTD   (Japan)

Author keywords

Damage; Gate etching; Ion irradiation; Ion scattering spectroscopy; Plasma; Si; Ultrathin SiO2; X ray photoelectron spectroscopy

Indexed keywords

EID: 0000083460     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.2124     Document Type: Article

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