Reducing damage to Si substrates during gate etching processes

Japanese Journal of Applied Physics

Volumn 47, Issue 7 PART 1, 2008, Pages 5324-5326

  Ohchi, Tomokazu ^a   Kobayashi, Shoji ^a   Fukasawa, Masanaga ^a   Kugimiya, Katsuhisa ^a   Kinoshita, Takashi ^a   Takizawa, Toshifumi ^b   Hamaguchi, Satoshi ^b   Kamide, Yukihiro ^a   Tatsumi, Tetsuya ^a  

^a SONY CORPORATION   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

Damage; Dry etching; Hydrogen; Plasma; Simulation

Indexed keywords

DISTRIBUTION FUNCTIONS; DYNAMICS; ETCHING; HYDROGEN; MOLECULAR DYNAMICS; OXIDE FILMS; PLASMA ETCHING; PLASMAS; POLYSILICON; QUANTUM CHEMISTRY; SILICON; SUBSTRATES;

DAMAGE; GATE ETCHINGS; GATE OXIDE FILMS; HIGH ENERGIES; ION ENERGY DISTRIBUTION FUNCTIONS; ION PENETRATIONS; MECHANISM OF FORMATIONS; PENETRATION DEPTHS; SI ETCHINGS; SI SUBSTRATES; SIMULATION; THRESHOLD ENERGIES;

DRY ETCHING;

EID: 55149083507     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.5324     Document Type: Article

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