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Surface and Interface Analysis

Volumn 33, Issue 8, 2002, Pages 640-652

Ultrathin SiO2 on Si II. Issues in quantification of the oxide thickness

(2) Seah, M P a Spencer, S J a

a NATIONAL PHYSICAL LABORATORY (United Kingdom)

Author keywords

Attenuation lengths; Forward focusing; Gate oxide; Layer thickness; Quantification; Silicon; Silicon oxide; XPS

Indexed keywords

CHEMICAL POLISHING; CONTAMINATION; CRYSTAL STRUCTURE; SEMICONDUCTING POLYMERS; SEMICONDUCTING SILICON; SILICA; SPECTROMETERS;

PHOTOELECTRONS;

ULTRATHIN FILMS;

EID: 0036684074 PISSN: 01422421 EISSN: None Source Type: Journal
DOI: 10.1002/sia.1433 Document Type: Article

Times cited : (192)

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