Study of plasma-surface interactions during overetch of polycrystalline silicon gate etching with high-density HBr/O2 plasmas

Applied Physics Letters

Volumn 79, Issue 16, 2001, Pages 2535-2537

  Tuda, Mutumi ^a   Shintani, Kenji ^a   Tanimura, Junji ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035886339     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1409952     Document Type: Article

References (16)

1. M. Nakamura, K. Iizuka, and H. Yano, Jpn. J. Appl. Phys., Part 1 28, 2142 (1989).
2. T. D. Bestwick and G. S. Oehrlein, J. Vac. Sci. Technol. A 8, 1969 (1990).
3. T. Morimoto, Jpn. J. Appl. Phys., Part 1 32, 1253 (1993).
4. M. Haverlag, G. S. Oehrlein, and D. Vender, J. Vac. Sci. Technol. B 12, 96 (1994).
5. C. C. Cheng, K. V. Guinn, and V. M. Donnelly, J. Vac. Sci. Technol. B 14, 85 (1996).
6. F. H. Bell and O. Joubert, J. Vac. Sci. Technol. B 15, 88 (1997).
7. M. Tuda and K. Ono, Jpn. J. Appl. Phys., Part 1 36, 2482 (1997).
8. M. Tuda, K. Shintani, and H. Ootera. J. Vac. Sci. Technol. A 19, 711 (2001).
9. V. M. Donnelly and N. Layadi, J. Vac. Sci. Technol. A 16, 1571 (1998).
10. M. Matsui, F. Uchida, T. Tokunaga, H. Enomoto, and T. Umezawa, Jpn. J. Appl. Phys., Part 1 38, 2124 (1999).
11. V. M. Donnelly, F. P. Klemens, T. W. Sorsch, G. L. Timp, and F. H. Baumann, Appl. Phys. Lett. 74, 1260 (1999).
12. L. Vallier, L. Desvoivres, M. Bonvalot, and O. Joubert, Appl. Phys. Lett. 23, 1069 (1999).
13. F. H. Bell and O. Joubert, J. Vac. Sci. Technol. B 14, 3473 (1996).
14. M. Tuda and K. Ono, Jpn. J. Appl. Phys., Part 2 36, L518 (1997).
15. M. Tuda, K. Shintani, J. Tanimura, and H. Dotera, Proceedings of the 22nd Dry Process Symposium, Tokyo, 2000 (IEEJ, Tokyo, 2000). p. 193.
16. J. Peeters and L. Li, J. Appl. Phys. 72, 719 (1992).