Parallel angle resolved XPS investigations on 12 in. wafers for the study of W and WSix oxidation in air

Microelectronic Engineering

Volumn 85, Issue 9, 2008, Pages 1882-1887

  Pelissier, B ^a   Beaurain, A ^a   Barnes, J P ^b   Gassilloud, R ^b   Martin, F ^b   Joubert, O ^a  

^a CNRS   (France)

^b CEA LETI   (France)

Author keywords

12 in. Wafers; ARXPS; Depth profile; Oxidation mechanisms; Thickness measurement; ToF SIMS; Tungsten; Tungsten silicide; XPS

Indexed keywords

MOLECULAR ORBITALS; MOLECULAR SPECTROSCOPY; PHOTOELECTRON SPECTROSCOPY;

12 IN. WAFERS; ANGLE-RESOLVED X-RAY PHOTOELECTRON SPECTROSCOPY; ANGLE-RESOLVED XPS; ARXPS; DEPTH PROFILE; OXIDATION MECHANISMS; THICKNESS MEASUREMENT; TOF SIMS; TUNGSTEN; TUNGSTEN SILICIDE; XPS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 49549084354     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.06.012     Document Type: Article

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