Halogen uptake by thin SiO2 layers on exposure to HBr/O 2 and Cl2 plasmas, investigated by vacuum transfer x-ray photoelectron spectroscopy

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 3, 1998, Pages 1571-1576

  Donnelly, V M ^a   Layadi, N ^a,b  

^a LUCENT TECHNOLOGIES   (United States)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AREAL DENSITIES; DC BIAS; DEPTH DISTRIBUTION; DEPTH PROFILE; ETCHING RATE; GATE ELECTRODES; GATE OXIDE LAYERS; HIGH DENSITY PLASMAS; ION ENERGIES; MAXIMUM ENTROPY; OVER-ETCHING; PHOTOELECTRON COLLECTION; PLASMA POTENTIAL; POLYCRYSTALLINE-SI; RF BIAS; SAMPLE SURFACE; SURFACE LAYERS; TAKE-OFF ANGLE; VACUUM TRANSFER; X-RAY PHOTOELECTRON SPECTROMETERS;

ELECTRODES; ETCHING; PHOTOIONIZATION; PHOTONS; PLASMAS; POLYSILICON; SILICON COMPOUNDS; VACUUM;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0000813779     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581189     Document Type: Article

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