Characterization of NBTI-Induced interface state and hole trapping in sion gate dielectrics of p-MOSFETs

IEEE Transactions on Device and Materials Reliability

Volumn 10, Issue 2, 2010, Pages 174-181

  Lee, Jen Hao ^a   Oates, Anthony S ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Hole trapping; Interface trap generation; Negative bias temperature instability (NBTI); Reaction diffusion (RD) model; Relaxation model

Indexed keywords

HOLE TRAPPING; NEGATIVE BIAS TEMPERATURE INSTABILITY; REACTION DIFFUSION; REACTION-DIFFUSION (RD) MODEL; RELAXATION MODELS; TRAP GENERATION;

DIFFUSION IN LIQUIDS; ELECTRIC FIELDS; GATES (TRANSISTOR); HOLE TRAPS; MOSFET DEVICES; NEGATIVE TEMPERATURE COEFFICIENT; NITRIDES; SEMICONDUCTING SILICON COMPOUNDS; THERMODYNAMIC STABILITY;

GATE DIELECTRICS;

EID: 77953247811     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2009.2039998     Document Type: Article

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