Hole-traps in silicon dioxides - Part II: Generation mechanism

IEEE Transactions on Electron Devices

Volumn 51, Issue 8, 2004, Pages 1274-1280

  Zhao, Ce Z ^a   Zhang, Jian F ^a   Groeseneken, Guido ^b   Degraeve, R ^b  

^a LIVERPOOL JOHN MOORES UNIVERSITY   (United Kingdom)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRON TRAPS; HOLE TRAPS; HYDROGEN; MATHEMATICAL MODELS; POLYSILICON; SILICA; SILICON ON INSULATOR TECHNOLOGY;

ANOMALOUS POSITIVE CHARGES; BORDER TRAPS; DEFECT GENERATION; GATE DIELECTRIC; SLOW STATES; SUBSTRATE HOLE INJECTION;

CMOS INTEGRATED CIRCUITS;

EID: 3943066405     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.831389     Document Type: Article

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