New characterization and modeling approach for NBTI degradation from transistor to product level

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 797-800

  Huard, V ^a   Parthasarathy, C ^b   Rallet, N ^a   Guerin, C ^a   Mammase, M ^a   Barge, D ^a   Ouvrard, C ^c  

^a STMICROELECTRONICS   (France)

^b STMicroelectronics Marketing Pvt Ltd India   (India)

^c NXP SEMICONDUCTORS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRON DEVICES; NEGATIVE TEMPERATURE COEFFICIENT; NONMETALS; SILICON; SULFATE MINERALS;

AND MODELING; NBTI DEGRADATION; PROCESS IMPROVEMENTS; PRODUCT OPTIMIZATION;

THERMODYNAMIC STABILITY;

EID: 40549123520     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4419068     Document Type: Conference Paper

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