Discrete-dopant-fluctuated threshold voltage roll-off in sub-16 nm bulk fin-type field effect transistors

Japanese Journal of Applied Physics

Volumn 47, Issue 4 PART 2, 2008, Pages 2580-2584

  Li, Yiming ^a   Hwang, Chih Hong ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Bulk FinFET; Metal gate; Modeling and simulation; Planar MOSFET; Random dopant; Threshold voltage fluctuation

Indexed keywords

CARRIER CONCENTRATION; CONCENTRATION (PROCESS); DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; FINS (HEAT EXCHANGE); MOSFET DEVICES; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; THREE DIMENSIONAL; THRESHOLD VOLTAGE; TRANSISTORS;

BULK FINFET; METAL GATE; MODELING AND SIMULATION; PLANAR MOSFET; RANDOM DOPANT; THRESHOLD VOLTAGE FLUCTUATION;

FIELD EFFECT TRANSISTORS;

EID: 54249120854     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.2580     Document Type: Article

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