Electrical characteristic fluctuations in 16 nm bulk-FinFET devices

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 2093-2096

  Li, Yiming ^a   Hwang, Chih Hong ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Bulk FinFET; Fluctuation; Modeling and Simulation; Nanoscale transistor; Random dopant

Indexed keywords

BULK-FINFET; DRAIN-INDUCED BARRIER LOWERING (DIBL); FLUCTUATION; NANOSCALE TRANSISTORS; RANDOM DOPANTS;

COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRIC PROPERTIES; LARGE SCALE SYSTEMS; RANDOM PROCESSES; THRESHOLD VOLTAGE;

FIELD EFFECT TRANSISTORS;

EID: 34248675792     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.055     Document Type: Article

References (19)

1. Riddet C., Brown A.R., Alexander C.L., Watling J.R., Roy S., and Asenov A. IEEE Trans. Nanotech. 6 (2007) 48-55
2. Li Y., and Yu S.M. Jpn. J. Appl. Phys. 45 (2006) 6860-6865
3. Asenov A. IEEE TED 45 (1998) 2505-2513
4. Asenov A. Proc. IEEE Conf. Solid-State Device Research 45 (1998) 300-303
5. Asenov A., Brown A.R., Davies J.H., and Saini S. IEEE Trans. CAD 18 (1999) 1558-1565
6. Asenov A., Kaya S., and Brown A.R. IEEE TED 50 (2003) 1254-1260
7. Hane M., Ikezawa T., and Ezaki T. Int. Conf. SISPAD (2003) 99-102
8. Li Y., Sze S.M., and Chao T.S. Engineering with Computers 18 (2002) 124-137
9. Asenov A., Kaya S., and Brown A.R. IEEE TED 50 (2003) 1254-1260
10. Cheng B., Roy S., Roy G., Brown A., and Asenov A. Solid-State Device Res. Conf. (2006) 258-261
11. Samsudin K., Cheng B., Brown A.R., Roy S., and Asenov A. Solid-State Device Res. Conf. (2005) 553-556
12. Wong H.-S., and Taur Y. IEDM (1993) 705-708
13. Frank D.J., Taur Y., Ieong M., and Wong H.-S. Symp. VLSI Circuits (1999) 171-172
14. Li Y., Chou H.M., and Lee J.W. IEEE Trans. Nanotech. 4 (2005) 510-516
15. Li Y., and Chen W.H. Proc. IEEE Conf. Nanotech. 2 (2006) 569-572
16. Wong H.S., and Taur Y. IEDM (1993) 705-708
17. J Nowak E., Aller I., Ludwig T., Kim K., Joshi R.V., Chuang C.-T., Bernstein K., and Puri R. IEEE Circuit and Device Magazine 20 (2004) 22-31
18. Kranti A., and Armstrong G.A. IEEE Int. SOI Conf. (2005) 96-98
19. Park D., Kim K., and Ryu B.-I. IEEE Conf. Solid-State and Integrated Circuits Tech. 1 (2004) 35-41