Accurate statistical description of random dopant-induced threshold voltage variability

IEEE Electron Device Letters

Volumn 29, Issue 8, 2008, Pages 946-948

  Millar, Campbell ^a   Reid, David ^a   Roy, Gareth ^a   Roy, Scott ^a   Asenov, Asen ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

Atomistic simulation; MOSFET; Random dopants; Statistics; Threshold voltage fluctuations

Indexed keywords

DOPING (ADDITIVES); RANDOM PROCESSES; TECHNOLOGICAL FORECASTING; THRESHOLD VOLTAGE; VOLTAGE DISTRIBUTION MEASUREMENT; VOLTAGE DIVIDERS;

ATOMISTIC SIMULATION; CIRCUIT DESIGNS; DEVICE SIMULATORS; GAUSSIAN; GRID COMPUTING TECHNOLOGIES; MOSFET; N -CHANNEL; RANDOM DOPANTS; SRAM CELLS; STATISTICAL DESCRIPTIONS; STATISTICS; THRESHOLD VOLTAGE DISTRIBUTION; THRESHOLD VOLTAGE FLUCTUATIONS;

GRID COMPUTING;

EID: 48649084318     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2001030     Document Type: Article

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