Process-variation- and random-dopants-induced threshold voltage fluctuations in nanoscale planar MOSFET and bulk FinFET devices

Microelectronic Engineering

Volumn 86, Issue 3, 2009, Pages 277-282

  Li, Yiming ^a   Hwang, Chih Hong ^a   Cheng, Hui Wen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Gate length deviation; Line edge roughness; Modeling and simulation; Process variation; Random dopant; Threshold voltage fluctuation

Indexed keywords

DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRON BEAM LITHOGRAPHY; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; MOS DEVICES; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR SWITCHES; SILICON COMPOUNDS; THRESHOLD VOLTAGE; TRANSISTORS;

GATE-LENGTH DEVIATION; LINE-EDGE ROUGHNESS; MODELING AND SIMULATION; PROCESS-VARIATION; RANDOM DOPANT; THRESHOLD VOLTAGE FLUCTUATION;

MOSFET DEVICES;

EID: 59049100697     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.02.013     Document Type: Article

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